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부품번호 | FBM85N80B 기능 |
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기능 | N-Channel Enhancement Mode MOSFET | ||
제조업체 | FBM | ||
로고 | |||
FBM85N80P/B
FBM@
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A
RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching application
• Power Management for Inverter Systems.
Pin Description
DS
G
TO-220FB-3L
D
DS
G
TO-263-2L
G N-Channel MOSFET
Ordering and Marking Information
S
P
FBM85N80
YYÿ XXXJWW G
B
FBM85N80
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L B : TO-263-2L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note: FBM lead-free products contain molding compounds/die attach materials and 100% matte tin plate termin-
ation finish; which are fully compliant with RoHS. FBM lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. FBM defines “Green” to mean
lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material
and total of Br and Cl does not exceed 1500ppm by weight).
FBM reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to ob tain th e l atest version of rel evant inf ormation to verif y b ef ore pl acing ord ers.
1 150623
FBM85N80P/B
FBM@
Typical Operating Characteristics
Power Dissipation
350
300
250
200
150
100
50
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180 200
TC -Case Temperature (°C)
Drain Current
90
limited by package
80
70
60
50
40
30
20
10
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160 180 200
TC -Case Temperature (°C)
Safe Operation Area
600
100us
100
1ms
10 10ms
DC
1
T =25oC
0.1 C
0.01 0.1 1 10 100 500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-5 1E-4
1E-3
Mounted on minimum pad
R :62.5oC/W
θJA
0.01 0.1 1 10
Square Wave Pulse Duration (sec)
4
4페이지 FBM85N80P/B
FBM@
Avalanche Test Circuit and Waveforms
DUT
VDS L
RG
tp
VDD
IL
0.01Ω
tp
IAS
VDSX(SUS)
tAV
VDS
EAS
VDD
Switching Time Test Circuit and Waveforms
DUT
VGS
RG
tp
VDS
RD
VDD
VDS
90%
10%
VGS
td(on) tr
td(off) tf
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ FBM85N80B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FBM85N80B | N-Channel Enhancement Mode MOSFET | FBM |
FBM85N80P | N-Channel Enhancement Mode MOSFET | FBM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |