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Número de pieza | MSN0880K | |
Descripción | N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
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75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V;ID=80A@ VGS=10V;
RDS(ON)<8mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
PIN Configuration
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880K
MSN0880K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±25
80
60
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page Figure7. BVDSS vs Junction Temperature
MSN0880K
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MSN0880K.PDF ] |
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