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PDF MSN7002Z Data sheet ( Hoja de datos )
| Número de pieza | MSN7002Z | |
| Descripción | N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN7002Z
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =700V,ID =2A
RDS(ON) <6.5 Ω @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-251 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7002Z
MSN7002Z
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
700
±30
2
1.25
8
28
0.20
120
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MSN7002Z.PDF ] | |
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