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PDF MSN7007F Data sheet ( Hoja de datos )

Número de pieza MSN7007F
Descripción N-Channel Enhancement Mode Power MOS FET
Fabricantes MORESEMI 
Logotipo MORESEMI Logotipo



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No Preview Available ! MSN7007F Hoja de datos, Descripción, Manual

MSN7007F
700V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =700V,ID =7A
RDS(ON) <1.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Lead Free
Application
Power switching application
Hard switched and high frequency circuits
Electronic ballast and transformer
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN7007F
MSN7007F
TO-220F
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
700
±30
7
4.2
28
48
0.20
515
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
MORE Semiconductor Company Limited
http://www.moresemi.com
1/5

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MSN7007F pdf
TO-220F-3L Package Information
MSN7007F
MORE Semiconductor Company Limited
http://www.moresemi.com
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