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PDF CY7C1462BV25 Data sheet ( Hoja de datos )
| Número de pieza | CY7C1462BV25 | |
| Descripción | 36-Mbit (1 M x 36/2 M x 18) Pipelined SRAM | |
| Fabricantes | Cypress Semiconductor | |
| Logotipo |  |
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CY7C1460BV25
CY7C1462BV25
36-Mbit (1 M × 36/2 M × 18)
Pipelined SRAM with NoBL™ Architecture
36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture
Features
■ Pin-compatible and functionally equivalent to ZBT™
■ Supports 250-MHz bus operations with zero wait states
❐ Available speed grades is 250 MHz
■ Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
■ Fully registered (inputs and outputs) for pipelined operation
■ Byte Write capability
■ 2.5 V core power supply
■ 2.5 V I/O power supply
■ Fast clock-to-output times
❐ 2.6 ns (for 250-MHz device)
■ Clock enable (CEN) pin to suspend operation
■ Synchronous self-timed writes
■ CY7C1460BV25, CY7C1462BV25 available in Pb-free
165-ball FBGA package and CY7C1462BV25 available in
JEDEC-standard Pb-free 100-pin TQFP package
■ IEEE 1149.1 JTAG-Compatible Boundary Scan
■ Burst capability – linear or interleaved burst order
■ “ZZ” sleep mode option and stop clock option
Functional Description
The CY7C1460BV25/CY7C1462BV25 are 2.5 V,
1 M × 36/2 M × 18 synchronous pipelined burst SRAMs with No
Bus Latency™ (NoBL logic, respectively. They are designed
to support unlimited true back-to-back read/write operations with
no wait states. The CY7C1460BV25/CY7C1462BV25 are
equipped with the advanced NoBL logic required to enable
consecutive read/write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent write/read
transitions. The CY7C1460BV25/CY7C1462BV25 are
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the byte write selects
(BWa–BWd for CY7C1460BV25 and BWa–BWb for
CY7C1462BV25) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
For a complete list of related documentation, click here.
Logic Block Diagram – CY7C1460BV25
A0, A1, A
MODE
CLK C
CEN
ADV/LD
BWa
BWb
BWc
BWd
WE
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
A1 D1
Q1 A1'
A0 D0 BURST Q0 A0'
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
D
A
T
A
S
T
E
E
R
I
N
O
U
T
P
U
T
B
U
F
F
E
R
S
E
G
INPUT
REGISTER 1 E
INPUT
REGISTER 0 E
DQs
DQPa
DQPb
DQPc
DQPd
OE
CE1 READ LOGIC
CE2
CE3
ZZ SLEEP
CONTROL
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-74446 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 24, 2015
1 page  
CY7C1460BV25
CY7C1462BV25
Pin Configurations (continued)
Figure 2. 165-ball FBGA (15 × 17 × 1.4 mm) pinout
123
A NC/576M
B NC/1G
A
A
CE1
CE2
C DQPc NC VDDQ
D
DQc
DQc
VDDQ
E
DQc
DQc
VDDQ
F
DQc
DQc
VDDQ
G
DQc
DQc
VDDQ
H NC NC NC
J
DQd
DQd
VDDQ
K
DQd
DQd
VDDQ
L
DQd
DQd
VDDQ
M
DQd
DQd
VDDQ
N DQPd NC VDDQ
P NC/144M NC/72M A
R MODE A
A
CY7C1460BV25 (1 M × 36)
4 567
BWc
BWd
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
BWb
BWa
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDI
CE3
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
A1
CEN
WE
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDO
A TMS A0 TCK
8
ADV/LD
OE
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
9
A
A
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
NC/288M
A
123
A NC/576M
B NC/1G
A
A
CE1
CE2
C NC NC VDDQ
D
NC
DQb
VDDQ
E
NC
DQb
VDDQ
F
NC
DQb
VDDQ
G
NC
DQb
VDDQ
H NC NC NC
J DQb NC VDDQ
K DQb NC VDDQ
L DQb NC VDDQ
M DQb NC VDDQ
N DQPb NC VDDQ
P NC/144M NC/72M A
R MODE
A
A
CY7C1462BV25 (2 M × 18)
4
BWb
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
5
NC
BWa
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDI
6
CE3
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
A1
7
CEN
WE
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
TDO
A TMS A0 TCK
8
ADV/LD
OE
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A
A
9
A
A
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
A
A
11
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC/288M
A
Document Number: 001-74446 Rev. *F
Page 5 of 29
5 Page 
CY7C1460BV25
CY7C1462BV25
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1460BV25/CY7C1462BV25 incorporates a serial
boundary scan test access port (TAP). This part is fully compliant
with 1149.1. The TAP operates using JEDEC-standard 2.5 V I/O
logic level.
The CY7C1460BV25/CY7C1462BV25 contains a TAP controller,
instruction register, boundary scan register, bypass register, and
ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied
LOW(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternately be connected to VDD through a pull-up resistor. TDO
should be left unconnected. Upon power-up, the device will
come up in a reset state which will not interfere with the operation
of the device.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to leave
this ball unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller Block
Diagram on page 14. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current state
of the TAP state machine (see TAP Controller State Diagram on
page 13). The output changes on the falling edge of TCK. TDO
is connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A RESET is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
At power-up, the TAP is reset internally to ensure that TDO
comes up in a high Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test circuitry.
Only one register can be selected at a time through the
instruction register. Data is serially loaded into the TDI ball on the
rising edge of TCK. Data is output on the TDO ball on the falling
edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO balls as shown in the TAP Controller Block Diagram on
page 14. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board-level serial test data path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW (VSS)
when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The length of the Boundary
Scan Register for the SRAM in different packages is listed in the
Scan Register Sizes table.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR state
and is then placed between the TDI and TDO balls when the
controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used to
capture the contents of the I/O ring.
The Boundary Scan Order on page 18 show the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the Identification Register Definitions on
page 17.
TAP Instruction Set
Overview
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in the Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and should not be used. The other five instructions
are described in detail below.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
Document Number: 001-74446 Rev. *F
Page 11 of 29
11 Page | ||
| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet CY7C1462BV25.PDF ] | |
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