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Número de pieza | DTM3A25P20NFDB | |
Descripción | 25V PNP LOW SAT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DTM3A25P20NFDB (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL
MOSFET
Features
Mechanical Data
Combination of PNP low VCE(sat) Transistor and N-Channel
MOSFET
Very low collector-emitter saturation voltage VCE(sat)
High Collector Current Capability IC and ICM
High Collector Current Gain (hFE) at high IC
PD up to 2.47W for power demanding applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Case: U-DFN2020-6 (Type B)
UL Flammability Rating 94V-0
Case Material: Molded Plastic. “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208 e4
Weight: 0.007 grams (Approximate)
U-DFN2020-6
(Type B)
C GS
6
CD
Top View
Device Symbol
1
E BD
Top View
Pin-Out
Ordering Information (Note 4)
Product
DTM3A25P20NFDB-7
Marking
1W1
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1W1
YWX
1W1 = Product Type Marking Code
Y = Year: 0~9 (Last Digit of the Year)
W = Week: A~Z: Week 1~26;
a~z: Week 27~52 ;
z represents week 52 and 53
X = A~Z: Internal Code
M = Month (ex: 9 = September)
DTM3A25P20NFDB
Datasheet Number: DS38017 Rev.1 - 2
1 of 10
www.diodes.com
January 2016
© Diodes Incorporated
1 page DTM3A25P20NFDB
Typical Electrical Characteristics - BJT PNP (@TA = +25°C, unless otherwise specified.)
1
Tamb=25°C
100m
I /I =50
CB
I /I =100
CB
10m
1m1m
I /I =20
CB
I /I =10
CB
10m
100m
1
- I Collector Current (A)
C
V vI
CE(sat) C
150°C
500
V =-2V
CE
400 100°C
300
25°C
200
100 -55°C
10m
10m
100m
1
10
- I Collector Current (A)
C
h vI
FE C
1.2
V =-2V
CE
1.0
25°C
0.8
-55°C
0.6
150°C
0.4
100°C
0.12m
10m
100m
1
- I Collector Current (A)
C
V vI
BE(on) C
0.3
I /I =10
CB
0.2
0.1
01.00m
150°C
100°C
25°C
-55°C
100m
1
- I Collector Current (A)
C
V vI
CE(sat) C
1.2
I /I =10
CB
1.0
0.8
25°C
-55°C
0.6
150°C
0.4 100°C
0.12m
10m
100m
1
- I Collector Current (A)
C
V vI
BE(sat) C
180
160 f = 1MHz
140
Cibo
120
100
80
60
40 Cobo
20
100m
100m
1
10
- Voltage(V)
Capacitance v Voltage
DTM3A25P20NFDB
Datasheet Number: DS38017 Rev.1 - 2
5 of 10
www.diodes.com
January 2016
© Diodes Incorporated
5 Page |
Páginas | Total 10 Páginas | |
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