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Datasheet DMHC10H170SFJ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DMHC10H170SFJ | 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCEADDIVNAFNOCREM IANTIFOONRMATION
DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V
RDS(ON) MAX
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V
ID TA = +25°C
2.9A
2.6A
-2. |  Diodes | mosfet |
DMH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DMH | ELECTRIC DOUBLE LAYER CAPACITORS DMH SERIES
ELECTRIC DOUBLE LAYER CAPACITORS
NEW
DMH
 Rubycon capacitor | | |
| 2 | DMHC10H170SFJ | 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCEADDIVNAFNOCREM IANTIFOONRMATION
DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V
RDS(ON) MAX
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V
ID TA = +25°C
2.9A
2.6A
-2. Diodes mosfet | | |
| 3 | DMHC3025LSD | 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT
DMHC3025LSD
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
V(BR)DSS
N-Channel
30V
P-Channel -30V
RDS(ON) max
25mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V 50mΩ @ VGS = -10V 80mΩ @ VGS = -4.5V
ID max TA = +25°C
6.0
4.6
-4.2
-3.2
Descrip Diodes mosfet | | |
| 4 | DMHC3025LSDQ | 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT
DMHC3025LSDQ
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
V(BR)DSS
N-Channel
30V
P-Channel -30V
RDS(ON) max
25mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V 50mΩ @ VGS = -10V 80mΩ @ VGS = -4.5V
ID max TA = +25°C
6.0
4.6
-4.2
-3.2
Descri Diodes mosfet | | |
| 5 | DMHC4035LSD | 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT
DMHC4035LSD
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device N-Channel P-Channel
V(BR)DSS 40V -40V
RDS(ON) max
45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V
ID max TA = +25°C
4.5A 4A -3.7A -2.9 Diodes mosfet | | |
| 6 | DMHC4035LSDQ | 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT
DMHC4035LSDQ
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device N-Channel P-Channel
V(BR)DSS 40V -40V
RDS(ON) max
45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V
ID max TA = +25°C
4.5A 4A -3.7A -2. Diodes mosfet | | |
| 7 | DMHC6070LSD | 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT
DMHC6070LSD
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device N-Channel P-Channel
V(BR)DSS 60V -60V
RDS(ON) Max
100mΩ @ VGS = 10V 120mΩ @ VGS = 4.5V 170mΩ @ VGS = -10V 250mΩ @ VGS = -4.5V
ID Max TA = 25°C
4.1A 3.7A 3.1A 2.6A
Descr Diodes mosfet | |
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