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PDF UMG4N Data sheet ( Hoja de datos )
| Número de pieza | UMG4N | |
| Descripción | DUAL NPN PRE-BIASED TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Features
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
UMG4N
DUAL NPN PRE-BIASED TRANSISTOR
321
SOT-353
(3) (2) (1)
R1 R1
45
TOP VIEW
(4)
Schematic and Pin Configuration
(5)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
50
50
5
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
fT
R1
Min
50
50
5.0
⎯
⎯
⎯
100
⎯
7
Typ Max Unit
Test Condition
⎯⎯
V IC = 50μA, IE = 0
⎯⎯
⎯⎯
V IC = 1mA, IB = 0
V IE = 50μA, IC = 0
⎯ 0.5 μA VCB = 50V, IE = 0
⎯ 0.5 μA VEB = 4V, IC = 0
⎯ 0.3
330 600
V IC = 10mA, IB = 1mA
⎯ VCE = 5V, IC = 1mA
250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz
10 13 kΩ
⎯
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Characteristics of transistor. For reference only.
DS31207 Rev. 3 - 2
1 of 3
www.diodes.com
UMG4N
© Diodes Incorporated
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| PDF Descargar | [ Datasheet UMG4N.PDF ] | |
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