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PDF ZXTP25100CZ Data sheet ( Hoja de datos )

Número de pieza ZXTP25100CZ
Descripción 100V PNP MEDIUM POWER TRANSISTOR
Fabricantes Diodes 
Logotipo Diodes Logotipo



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No Preview Available ! ZXTP25100CZ Hoja de datos, Descripción, Manual

Features
BVCEO > -100V
BVECO > -7V
IC = -1A Continuous Collector Current
ICM = -3A Peak Collector Current
VCE(SAT) < -225mV @ -1A
RCE(SAT) = 155mfor a Low Equivalent On-Resistance
Complementary NPN Type: ZXTN25100DZ
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ZXTP25100CZ
100V PNP MEDIUM POWER TRANSISTOR IN SOT89
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Top View
Pin Out
Ordering Information (Note 4)
Product
ZXTP25100CZTA
Compliance
AEC-Q101
Marking
1L7
Reel Size (inches) Tape Width (mm) Quantity per Reel
7 12 1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1L7
1L7 = Product Type Marking Code
ZXTP25100CZ
Datasheet Number: DS33759 Rev. 2 - 2
1 of 8
www.diodes.com
April 2016
© Diodes Incorporated

1 page




ZXTP25100CZ pdf
ZXTP25100CZ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVECX
BVECO
BVEBO
ICBO
Min
-115
-100
-7
-7
-7
Typ
-180
-140
-8.3
-8.8
-8.4
<-1
Collector-Emitter Cutoff Current
ICEX
Emitter Cutoff Current
DC current transfer Static ratio (Note 11)
IEBO
<1
200 350
180 320
hFE 110 190
20 35
Collector-Emitter Saturation Voltage (Note 11) VCE(SAT)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
VBE(SAT)
VBE(ON)
-140
-80
-180
-155
-860
-800
Transitional Frequency
fT 180
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
153
COBO
14.1
tD 15.8
tR 41
tS 411
tF 89
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
-50
-0.5
-100
-50
500
-210
-115
-315
-225
-950
-900
20
Unit
V
V
V
V
V
nA
µA
nA
nA
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA, RBC <1kΩ or
-0.25V > VBC > 0.25V
IE = -100µA
IE = -100µA
VCB = -115V
VCB = -115V, TA = +100°C
VCE = -90V, RBE <1kΩ or
-0.25V < VBE < 1V
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -500mA, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
IE = -20mA, VCE = -15V
f = 100MHz
VEB = -0.5V, f = 1MHz,
VCB = -10V, f = 1MHz,
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
ZXTP25100CZ
Datasheet Number: DS33759 Rev. 2 - 2
5 of 8
www.diodes.com
April 2016
© Diodes Incorporated

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