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Datasheet K2828 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K2828 | N-Channel MOSFET, 2SK2828 2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings
Outline
TO–3P
ADE-208-514 C (Z) 4th. Edition Feb |  Hitachi | data |
K28 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K2800 | N-Channel MOSFET, 2SK2800 2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
 Hitachi Semiconductor data | | |
| 2 | K2803 | N-Channel MOSFET, 2SK2803 2SK2803
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 –55 to +150
(Ta = 25ºC)
External dimensions 1 ...... FM20
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (o  Sanken data | | |
| 3 | K2806-01 | N-Channel MOSFET, 2SK2806-01 2SK2806-01
FAP-IIIB Series
> Features
High Current
N-channel MOS-FET
30V
0,02Ω
35A
30W
> Outline Drawing
Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maxi  Fuji Electric data | | |
| 4 | K2826 | N-Channel MOSFET, 2SK2826 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Super Low On-State Resistance
RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID =  NEC data | | |
| 5 | K2828 | N-Channel MOSFET, 2SK2828 2SK2828
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings
Outline
TO–3P
ADE-208-514 C (Z) 4th. Edition Feb Hitachi data | | |
| 6 | K2834-01 | N-Channel MOSFET, 2SK2834-01 Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Fuji Electric data | | |
| 7 | K2835 | N-Channel MOSFET, 2SK2835 2SK2835
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2835
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage  Toshiba Semiconductor data | |
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