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부품번호 | WFF4N65L 기능 |
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기능 | Silicon N-Channel MOSFET | ||
제조업체 | Winsemi | ||
로고 | |||
WFF4N65L Product Description
Silicon N-Channel MOSFET
Features
� 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V
� Low Crss (typical 3.62pF )
� Fast switching
� 100% avalanche tested
� Improved dv/dt capability
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ Junction Temperature
Tstg Storage Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
4
2.5
16
±30
256
11
5.5
33
0.26
150
-55~150
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
- - 3.79 ℃/W
- - 62.5 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F119-Rev.A0 Dec.2015(B0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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WFF4N65L Product Description
Silicon N-Channel MOSFET
1.15
1.10
1.05
1.00
0.95
0.90
Notes:
3、VGS=0V
4、ID=250uA
-75 -50 -25 0 25 50 75 100 125 150
Tj[℃]
Fig.7 Breakdown Voltage Variation
vs. Temperature
101
Operation in This Area
is L im ite d b y RDS(on)
100
100us
1ms
10ms
100ms
DC
3.0
2.5
2.0
1.5
1.0
0.5
Notes:
1、VGS=10V
2、ID=2.0A
0
0 -75 -50 -25 0 25 50 75 100 125 150
Tj[℃]
Fig.8On-Resistance Variation
vs. Temperature
4
3
2
1 0 -1
1 0 -2
100
Notes:
1 .Tc= 2 5 °C
2 . T J=150°C
3.Single pulse
101 10 2
VD S [V]
103
Fig.9 Maximum Safe Operation Area
1
0
25 50
75 100 125 150
Tc [℃]
Fig.10 Maximum Drain Current
vs Case temperature
D=0.5
100
0 .2
0 .1
0.05
1 0 -1 0.02
0.01
1 0 -2
1 0 -5
*Note :
1.ZθJ C ( t) =3.79°C/W Max.
2.Duty Factor,D=t1/t2
3 .TJM- TC=PDM* ZθJ C ( t)
Single Pulse
PD M
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
T1[sec]
Fig.11 Transient thermal Response Curve
101
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
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4페이지 WFF4N65L Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
E
P
B
b
ee
Q1
U n it:m m
F 符号
Symbol
M IN
MAX
A 4 .5 4 .9
B - 1.47
b 0 .7 0 .9
c
0 .4 5
0 .6
D
15.67
16.07
E
9 .9 6
10.36
e 2.54TYPE
F
2 .3 4
2 .7 4
L
12.58
13.38
C
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q 3 .2 3 .4
Q1
2 .5 6
2 .9 6
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
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부품번호 | 상세설명 및 기능 | 제조사 |
WFF4N65 | N-Channel MOSFET | Wisdom technologies |
WFF4N65L | Silicon N-Channel MOSFET | Winsemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |