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PDF WFP8N60B Data sheet ( Hoja de datos )
| Número de pieza | WFP8N60B | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFP8N60B Product Description
Silicon N-Channel MOSFET
Features
� 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
� Ultra-low Gate charge(Typical 25nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (VISO=4000V AC)
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
half bridge and full bridge resonant topology line a electronic lamp
ballast, high efficiency switched mode power supplies, active power
factor correction.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
600
7.5
4.3
30
±30
590
7
14
4.5
142
1.14
-55~150
300
Units
V
A
A
A
V
mJ
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.88 ℃/W
- - 62.5 ℃/W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F052-Rev.A0 Oct.2013
WIN SEM I M ICROELECTRON ICS
1008
1 page  
WFP8N60B Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test Circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
5/8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFP8N60B.PDF ] | |
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