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부품번호 | WFU2N65L 기능 |
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기능 | Silicon N-Channel MOSFET | ||
제조업체 | Winsemi | ||
로고 | |||
WFU2N65L Product Description
Silicon N-Channel MOSFET
Features
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 8nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
D
G
S
G
D
S
TO-251
Value
650
2.0
1.1
6
±30
210
4.2
4.6
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 2.88 ℃/W
- - 110 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F099-Rev.A0 Nov.2015
WINSEMI MICROELECTRONICS
1115
WFU2N65L Product Description
Silicon N-Channel MOSFET
1 .2
1 .1
1 .0
0 .9 Notes:
1.VG S =0V
2.ID=250uA
0 .8
-7 5 -5 0 -2 5 0 2 5 5 0 7 5 100 125 150
。
Tj[ C]
Fig.7 Breakdown Voltage Variation
Vs,Temperature
101
Operation in This Area
is limited by R DS(on)
100
100us
1ms
10ms
DC
1 0 -1
1 0 -2
100
N12..oTTtcJe==s12:550。。CC
Single pulse
101 102
VD S [V]
103
Fig.9 Maximum Safe Operation Area
3 .0
2 .5
2 .0
1 .5
1 .0
0 .5
Notes:
1.VG S =10V
2. I D= 1. 0A
0 .0
-7 5 -5 0 -2 5 0 2 5 5 0 7 5 100 125 150
Tj[。C]
Fig.8 On-Resistance Variation
vs.temperature
2 .0
1 .8
1 .6
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
0 .2
0 .0
25
50
75
100 125
150
Tc[。C]
Fig.10 Maximum Drain Current vs
Case Temperature
D=0.5
100
0 .2
0 .1
0 .0 5
1 0 -1 0 .0 2
0 .0 1
Single Pulse
* N o te:
1.ZθJ C (t)=2.87 。C/W Max.
2.Duty Factor,D=t1/t2
3 .TJM* TC=P DM* Zθ J C (t)
PD M
t1
t2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
t1,Square Wave Pulse Duration [sec]
Fig.11 Transient Thermal Response curve
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
4/8
4페이지 WFU2N65L Product Description
Silicon N-Channel MOSFET
TO-251 Package Dimension
Unit:mm
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
7/8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
WFU2N65L | Silicon N-Channel MOSFET | Winsemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |