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PAM3112 데이터시트 PDF




Diodes에서 제조한 전자 부품 PAM3112은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 PAM3112 기능
기능 300mA CMOS LINEAR REGULATOR
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PAM3112 데이터시트, 핀배열, 회로
NOT RECOMMENDED FOR NEW DESIGN
USE AP2127
PAM3112
300mA CMOS LINEAR REGULATOR
Description
The PAM3112 regulator features low quiescent current (65µA Typ)
and excellent line/load regulation, making it ideal for battery powered
applications. The output voltage can be 1.2V or 1.3V. Space-saving
packages SOT23, TSOT25, SOT-89 and SC70 are attractive for
portable and handheld applications. It has both thermal shutdown and
a current limit features to prevent device failure under extreme
operating conditions. The device is stable with an output capacitance
of 2.2µF or greater.
Pin Assignments
Top View
SOT23
Top View
TSOT25
Features
Accuracy within ±2%
Quiescent Current: 65µA Typ.
Excellent Line/Load Regulation
Guaranteed 300mA Output Current
Fast Response
Current Limiting
Short Circuit Protection
Low Temperature Coefficient
Thermal Shutdown
Space Saving Package: SOT23, TSOT25, SOT-89 and SC70
Pb-Free Package
Applications
Cordless Phone
Cellular Phone
Bluetooth Earphone
Digital Camera
Portable Electronics
WLAN
MP3 Player
Typical Applications Circuit
PAM3112
Document number: DS36424 Rev. 3 - 3
1 of 17
www.diodes.com
May 2016
© Diodes Incorporated




PAM3112 pdf, 반도체, 판매, 대치품
NOT RECOMMENDED FOR NEW DESIGN
USE AP2127
Electrical Characteristics (@TA = +25°C, VIN = 3V, CIN = 1µF, CO = 2.2µF, unless otherwise specified.)
PAM3112
Parameter
Input Voltage
Output Voltage Accuracy
Output Current
Ground Current
Quiescent Current
Line Regulation
Load Regulation
Short Circuit Current
Temperature Coefficient
Over Temperature Shutdown
Over Temperature Hysteresis
Power Supply Ripple Rejection
Output Noise
EN Input High Threshold
EN Input Low Threshold
Shutdown Current
Symbol
VIN
VO
IO
IGND
IQ
LNR
LDR
ISC
TC
OTS
OTH
PSRR
VN
VIN
VIL
ISD
Test Conditions
IO = 1mA
IO = 1mA to 300mA
IO = 0mA
VIN = 2.5V to 5.0V IO = 10mA
IO = 1mA to 300mA
VO = 0V
IO = 1mA
IO = 1mA
IO = 100mA
CBYP = 10nF
f = 10Hz to 100kHz, CBYP = 10nF
VIN = 2.5V to 5V
VIN = 2.5V to 5V
VEN = 0V
f = 100Hz
f = 1kHz
Notes: 1. Output current is limited by PD, maximum IO = 400mW/ (VIN(MAX) VO).
Min
2.5
-2
300
-0.15
1.5
Typ
70
65
0.10
30
130
40
+150
+30
70
65
50
0.01
Max
5.5
+2
Note 1
90
90
0.15
60
0.3
1
Units
V
%
mA
µA
µA
%/V
mV
mA
ppm/°C
°C
°C
dB
µVRMS
V
V
µA
PAM3112
Document number: DS36424 Rev. 3 - 3
4 of 17
www.diodes.com
May 2016
© Diodes Incorporated

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PAM3112 전자부품, 판매, 대치품
NOT RECOMMENDED FOR NEW DESIGN
USE AP2127
PAM3112
Application Information
Capacitor Selection and Regulator Stability
Similar to any low dropout regulator, the external capacitors used with the PAM3112 must be carefully selected for regulator stability and
performance.
A capacitor CIN of more than 1µF can be used at the PAM3112 input pin, while there is no upper limit for the capacitance of CIN. Please note that
the distance between CIN and the input pin of the PAM3112 should not exceed 0.5 inch. Ceramic capacitors are suitable for the PAM3112.
Capacitors with larger values and lower ESR (equivalent series resistance) provide better PSRR and line-transient response.
The PAM3112 is designed specifically to work with low ESR ceramic output capacitors in order to save space and improve performance. Using
an output ceramic capacitor whose value is >2.2µF with ESR>5mΩ ensures stability.
A 10nF bypass capacitor connected to BYP pin is suggested for suppressing output noise. The capacitor, in series connection with an internal
200kresistor, forms a low-pass filter for noise reduction. Increasing the capacitance will slightly decrease the output noise, but increase the
startup time.
Load Transient Consideration
Curve 7 of the PAM3112 load-transient response on page 6 shows two components of the output response, a DC shift from the output
impedance due to the load current change and transient response. The DC shift is quite small due to excellent load regulation of the PAM3112.
The transient spike, resulting from a step change in the load current from 1mA to 300mA, is 20mV. The ESR of the output capacitor is critical to
the transient spike. A larger capacitance along with smaller ESR results in a smaller spike.
Shutdown Input Operation
The PAM3112 is shut down by pulling the EN input low and turned on by tying the EN input to VIN or leaving the EN input floating.
Internal P-Channel Pass Transistor
The PAM3112 features a 0.75Ω P-Channel MOSFET device as a pass transistor. The P-MOS pass transistor enables the PAM3112 to consume
only 65µA of ground current during low dropout, light-load, or heavy-load operation. These features increase the battery operation life time.
Input-Output (Dropout) Voltage
A regulator's minimum input-output voltage difference (or dropout voltage) determines the lowest usable supply voltage. The PAM3112 has a
typical 300mV dropout voltage. In batterypowered systems, this will determine the useful end-of-life battery voltage.
Current Limit and Short Circuit Protection
The PAM3112 features a current limit, which monitors and controls the gate voltage of the pass transistor. The output current can be limited to
400mA by regulating the gate voltage. The PAM3112 also has a built-in short circuit current limit.
Thermal Considerations
Thermal protection limits power dissipation in the PAM3112. When the junction temperature exceeds +150°C, the OTP (Over Temperature
Protection) starts the thermal shutdown and turns the pass transistor off. The pass transistor resumes operation after the junction temperature
drops below +120°C.
For continuous operation, the junction temperature should be maintained below +125°C.
The power dissipation is defined as:
 PD VIN VOUT * IO VIN * IGND
The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surrounding airflow and temperature
difference between junction and ambient. The maximum power dissipation can be calculated by the following formula:
 PD(MAX) TJ(MAX) TA / JA
PAM3112
Document number: DS36424 Rev. 3 - 3
7 of 17
www.diodes.com
May 2016
© Diodes Incorporated

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