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부품번호 NIS5132 기능
기능 3.6A 12V RESETTABLE ELECTRONIC FUSE
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NIS5132 데이터시트, 핀배열, 회로
NIS5132
Green 3.6A 12V RESETTABLE ELECTRONIC FUSE
Description
The NIS5132 is a self-protected resettable electronic fuse designed
for consumer applications such as hard disk drives, to industrial
applications to enhance system reliability against catastrophic and
shutdown failures.
To support a wide range of demanding applications, the design has
been optimized to operate over the supply range of 9.0V to 18V. For
robustness and protections, the device integrates a low Rdson
NMOS buffer power device along with an undervoltage lockout,
overvoltage clamp, a current limit, a dv/dt control and a thermal
shutdown circuits. The overvoltage circuit limits the output voltage
without shutting the device down to allow the load to continue
operating during over voltage. Thermal shutdown can be either
latching type (NIS5132MN1) or auto-retry type (NIS5132MN2).
Pin Assignments
( Top View )
GND 1
dv/dt 22
Enable/Fault 3
ILIMIT 4
NC 5
NIS5132MN1
NIS5132MN2
10 Source
29 Source
8 Source
7 Source
6 Source
U-DFN3030-10
Features
Applications
9.0 to 18V Operating Input Voltage
Integrated NMOS Power Device with RDS(ON) of 30mΩ Typical
Internal Current Limit - No External Current Sense Resistor in
Hard Drives
Mother Board Power Management
Printer Load Power Management
Load Path
Under Voltage Lockout
Over Voltage Clamp (NIS5132MN1 and NIS5132MN2)
Thermal Shutdown
-40C to +150C Operating Junction Temperature
ESD Ratings : HBM 1500V; MM 200V
Small Low Profile U-DFN3030-10 package
UL Recognized, Report E322375-20140529
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green” and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
Typical Application Circuits
+12V
11 VDD
SOURCE
10
9
+
10µF
NIS5132
8
7
6
ENABLE
3 ENABLE
ILIMIT 4
GND
1
dv/dt
2
Cdv/dt
+
RS 100µF Load
Figure 1 Application Circuit with Direct Current Sensing
NIS5132
Document number: DS36457 Rev. 4 - 2
1 of 12
www.diodes.com
May 2016
© Diodes Incorporated




NIS5132 pdf, 반도체, 판매, 대치품
NIS5132
Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.)
Symbol
VDD
JA
JL
JC
PDMAX
-
Ts
Characteristic
Input Voltage in Steady State Operating Conditions (Note 5)
Input Voltage - Transient (100ms)
Junction to Air Thermal Resistance
0.1 in2 (Note 6)
0.5 in2 (Note 6)
Junction to Lead Thermal Resistance
Junction to Case Thermal Resistance
Package Power Dissipation at TA= +25°C
Thermal Derating Above +25°C
Storage Temperature Range
Value
-0.6 to +18
-0.6 to +25
227
95
27
20
1.3
10.4
-55 to +155
Unit
V
°C/W
W
mW/°C
°C
TJ Operating Junction Temperature (Note 7)
TL Lead Temperature During Soldering (10s)
-40 to +150
+260
°C
°C
Notes:
4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings
only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device
reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Negative voltage will not damage the device provided that the power dissipation is within the package package dissipation rating.
6. 1 oz copper on double sided FR-4 PCB.
7. Thermal limit is set above the maximum thermal rating. It is not recommended to operate the device at temperature above the maximum rating
for extended period.
Recommended Operating Conditions
Symbol
VDD
TJ
Characteristic
Supply Voltage
Operating Juntion Temperature Range
Test Condition
Operating
Operating
Rating
9.0 to 18.0
-40 to +150
Unit
V
°C
NIS5132
Document number: DS36457 Rev. 4 - 2
4 of 12
www.diodes.com
May 2016
© Diodes Incorporated

4페이지










NIS5132 전자부품, 판매, 대치품
Performance Characteristics (Cont.)
35
32.5
30
27.5
25
22.5
20
7 8 9 10 11 12 13 14 15
VCC (V)
Figure 12 Power Device ON Resistance (RDS(ON)) vs. VCC
NIS5132
10
OL
SC
1
0.1
10
100
R sense (W )
1000
Figure 13 Current Limit vs. RSENSE for Direct Current
Sensing
4.5
4
3.5
3
2.5
2
OL
1.5 SC
1
0.5
0
-50 -30 -10 10 30 50 70 90
Temperature (oC)
Figure 14 Direct Current Sensing Level vs. Temperature
(RSENSE = 27Ω)
10
1
OL
SC
0.1
1 10 100
Rlimit (W)
Figure 15 Current Limit vs. RSENSE for Kelvin Current
Sensing
6
5.5
OL
5 SC
4.5
4
3.5
3
-40 -20
0
20 40 60 80 100
Temperature (oC)
Figure 16 Kelvin Current Sensing Levels vs. Temperature
(RSENSE = 15Ω)
4
3.5
3
2.5
2
OL
1.5 SC
1
-40 -20
0
20 40 60 80 100
Temperature (oC)
Figure 17 Kelvin Current Sensing Levels vs. Temperature
(RSENSE = 33 Kelvin Current Sensing Levels vs. Temperature
(RSENSE = 33
NIS5132
Document number: DS36457 Rev. 4 - 2
7 of 12
www.diodes.com
May 2016
© Diodes Incorporated

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