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PDF WFP13N50C Data sheet ( Hoja de datos )
| Número de pieza | WFP13N50C | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFP13N50C Product Description
Silicon N-Channel MOSFET
Features
� 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V
� Ultra-low Gate charge(Typical 37nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based
process.This technology improves the performances compared with
standard parts from various sources. All of these power MOSFETs are
designed for applications in switching regulators, switching convertors,
motor and relay drivers, and drivers for high power bipolar switching
transistors demanding high speed and low gate drive power.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
（note 1）
(Note1)
(Note3)
Value
500
13
8
52
±30
845
13
5
4.5
190
1.56
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 0.66
- - 62.5
Units
℃/W
℃/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-017-Rev.A0 Apr.2013
WINSEM I M ICROELECTRONICS
1 page  
WFP13N50C Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
10V
tp
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFP13N50C.PDF ] | |
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