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WFU4N65S 데이터시트 PDF




Winsemi에서 제조한 전자 부품 WFU4N65S은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 WFU4N65S 기능
기능 Power MOSFET ( Transistor )
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WFU4N65S 데이터시트, 핀배열, 회로
WFU4N65S Product Description
650V Super-Junction Power MOSFET
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg =13nC)
100% UIS tested
RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Continuous Drain Current (Tc=25)
ID (Tc=100)
Parameter
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25)
PD -Derate above 25
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse
Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=2A,VDD=60V,RG=25Ω,Starting TJ=25
Thermal Characteristics
Symbol
Parameter
RQJC Thermal Resistance , Junction -to -Case
RQJA Thermal Resistance , Junction-to -Ambient
D
G
S
Value
650
4
2.5
12
±30
130
4
0.4
50
0.4
150
-55~150
4
12
Units
V
A
A
V
mJ
A
mJ
W
W/
A
A
Value
Units
Min Typ Max
- - 2.5 /W
- - 62 /W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F051-Rev.A1 Nov.2013
WIN SEM I M ICROELECTRON ICS
0309




WFU4N65S pdf, 반도체, 판매, 대치품
WFU4N65S Product Description
650V Super-Junction Power MOSFET
10000.00
1000.00
100.00
10.00
CC ci si
s
s
=
s
=
C
C
gs +C
gd
gd (C
ds
shor ted)
Co s s = C d s + C g d
Cis s
Co s s
Cr ss
1 .0 0 Notes:
f=1M Hz
VG S =0V
0.10
0 .1
1 10
Drain-Source Voltge V D S(V)
100
Fig.7Capacitance Characreristics
10
VD S =120V
8
VD S =480V
6
4
2
ID=2A
0
0 2 4 6 8 10 12
Total Gate Charge Q G (nC)
Fig.8 Gate Charge Characteristics
14
100
1 0 Limlied by R D S(on)
1
1ms 100us
0 .1 NTTcco==te22s55:。。CC
Single Pulse
0.01
1
10 100
Drain-Source Voltage V DS(V)
1000
Fig.9 Maximum Safe Operation Area
40
35
30
25
20
15
10
5
0
0
40 80 120
Case temper atur e T c (C)
160
Fig.10 Power Dissipation vs.Temperature
1. 0E+01
1. 0E+00
In des c ending or der
D= 0.7,0.5,0.3,0.1,0.05,0.02,0.01,s ingle puls e
1.0E-01
1.0E-02
1.0E-03
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
PD M
t
D u ty= t/T
ZθJC (t)=4.3
C /W
Ma
x.
T
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Pulse Width t (s)
Fig.11 Transient Thermal Response Curve
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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WFU4N65S 전자부품, 판매, 대치품
WFU4N65S Product Description
650V Super-Junction Power MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : 86-0755-82506257
FAX : 86-0755-82506299
Web Site : www.winsemi.com
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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WFU4N65S

Power MOSFET ( Transistor )

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