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PDF A2017 Data sheet ( Hoja de datos )
| Número de pieza | A2017 | |
| Descripción | Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
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Hay una vista previa y un enlace de descarga de A2017 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Transistors
Power Transistor (−80V, −4A)
2SA2017
!Features
1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SC5574.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
-80
-80
-5
-4
-6
30
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W(Tc = 25°C)
°C
°C
2SA2017
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA2017
TO-220FN
E
-
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VCE(sat)
hFE
fT
Cob
Min.
−80
−80
−5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
12
80
Max.
-
-
-
−10
−10
−1.5
−1.5
200
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Conditions
IC = −1mA
IC = −50µA
IE = −50µA
VCB = −80V
VEB = −4V
IC/IB = −2A/−0.2A
IC/IB = −2A/−0.2A
VCE/IC = −4V/−1A
VCE = −12V , IE = 0.5A
VCB = −10V , IE = 0A , f = 1MHz
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet A2017.PDF ] | |
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