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부품번호 | NRVB120LSF 기능 |
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기능 | Surface Mount Schottky Power Rectifier | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
MBR120LSF, NRVB120LSF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = C
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Device Marking: L2L
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L2LMG
G
L2L = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBR120LSFT1G SOD−123FL
3,000 /
(Pb−Free) Tape & Reel **
NRVB120LSFT1G SOD−123FL
3,000 /
(Pb−Free) Tape & Reel **
MBR120LSFT3G SOD−123FL
10,000 /
(Pb−Free) Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1
Publication Order Number:
MBR120LSFT1/D
MBR120LSF, NRVB120LSF
1000
100
TJ = 25°C
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
125
120
115
110
105
100
95
90
85
80
75
70
65
0
RqJA = 25.6°C/W
130°C/W
235°C/W
324.9°C/W
400°C/W
2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100 0.2
0.1
0.05
10
0.01
1
SINGLE PULSE
0.1
0.000001 0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Test Type > Min Pad < Die Size 38x38 @ 75% mils
qJA = 321.8 °C/W
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
1
10 100 1000
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NRVB120LSF | Surface Mount Schottky Power Rectifier | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |