Datasheet.kr   

NRVB120LSF 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NRVB120LSF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NRVB120LSF 자료 제공

부품번호 NRVB120LSF 기능
기능 Surface Mount Schottky Power Rectifier
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NRVB120LSF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 5 페이지수

미리보기를 사용할 수 없습니다

NRVB120LSF 데이터시트, 핀배열, 회로
MBR120LSF, NRVB120LSF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
Human Body Model = 3B
Machine Model = C
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Device Marking: L2L
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L2LMG
G
L2L = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBR120LSFT1G SOD−123FL
3,000 /
(Pb−Free) Tape & Reel **
NRVB120LSFT1G SOD−123FL
3,000 /
(Pb−Free) Tape & Reel **
MBR120LSFT3G SOD−123FL
10,000 /
(Pb−Free) Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
1
Publication Order Number:
MBR120LSFT1/D




NRVB120LSF pdf, 반도체, 판매, 대치품
MBR120LSF, NRVB120LSF
1000
100
TJ = 25°C
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
125
120
115
110
105
100
95
90
85
80
75
70
65
0
RqJA = 25.6°C/W
130°C/W
235°C/W
324.9°C/W
400°C/W
2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100 0.2
0.1
0.05
10
0.01
1
SINGLE PULSE
0.1
0.000001 0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Test Type > Min Pad < Die Size 38x38 @ 75% mils
qJA = 321.8 °C/W
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
1
10 100 1000
http://onsemi.com
4

4페이지












구       성 총 5 페이지수
다운로드[ NRVB120LSF.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NRVB120LSF

Surface Mount Schottky Power Rectifier

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵