|
|
PDF NSR05F40QNXT5G Data sheet ( Hoja de datos )
| Número de pieza | NSR05F40QNXT5G | |
| Descripción | Schottky Diode Optimized | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NSR05F40QNXT5G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NSR05F40QNXT5G
Schottky Diode Optimized
for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 420 mV @ 500 mA
• Low Reverse Current − 15 mA @ 10 V VR
• 500 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• Equivalent Processing and Electrical Performance as
NSR05F40NXT5G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping and Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 40 V
Forward Current (DC)
IF 500 mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
10
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
4.0
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8
> 400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0402)
CASE 152AC
MARKING
DIAGRAM
PIN 1
05F40
YYY
05F40 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package Shipping†
NSR05F40QNXT5G DSN2 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 1
1
Publication Order Number:
NSR05F40Q/D
1 page  
NSR05F40QNXT5G
analysis. This analysis showed that there was no shift in any
of the parameters, forward voltage, reverse leakage current,
and capacitance.
1.2
1
85°C
0.8
0.6 25°C
0.4
−30°C
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
REVERSE VOLTAGE (V)
Figure 7. Reverse Leakage Characteristics
Finally these diodes were placed in the same circuit at 25C
for 1 week of continuous operation. The screen shots below
in Figures 9 and 10 show the operation on the first day of
continuous operation and 5 days respectively.
The graphs below shown below demonstrate the Pre and
Post−Stress characterization graphs and how that there was
no change in the part performance.
1E−01
1E−03
1E−05
1E−07
85°C
25°C
1E−09
−30°C
1E−11
0
10 20 30 40 50
FORWARD VOLTAGE (V)
Figure 8. Forward Current Characterization
To further evaluate the performance, a thermal camera
was used to take pictures of the NSR05F40QNXT5G during
heavy load operation and 25°C. As seen in Figure 11 the case
only got to 29.2°C. This translates to less than 20 mW of
total power dissipation.
Figure 9. NSR05F40QNXT5G on Day 1 at 255C
Figure 10. NSR05F40QNXT5G on Day 5 at 255C
Figure 11. Case Temperature of NSR05F40NXT5G in
Operation at 255C, 150 mA 34 V Output
With a heavy load condition (up to 1.2 A) through the
NSR05F40QNXT5G on a minimum pad size the ambient
temperature can rise up to 145°C and not degrade the
performance. Using ON Semiconductor’s new ultra low
profile Wireless Boost Application Optimized Schottky
diodes will increase the overall efficiency and battery life
while reducing board size and cost associated with thermal
pads.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NSR05F40QNXT5G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NSR05F40QNXT5G | Schottky Diode Optimized | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |