|
|
|
부품번호 | RB160SS-30 기능 |
|
|
기능 | Schottky Barrier Diode | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 8 페이지수
Schottky Barrier Diode
RB160SS-30
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Small power mold type
(KMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
0~0.03
0.8±0.05
0.6±0.03
ROHM : KMD2
JEDEC : -
JEITA : -
: Dot (Year, week, factory)
0.7±0.05
lTaping Dimensions (Unit : mm)
KMD2
lStructure
(1) Cathode
(2) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30
1
5
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF1 IF=0.7A - - 0.49 V
VF2 IF=1.0A - - 0.52 V
IR1 VR=10V - - 10 mA
IR2 VR=30V - - 35 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.10 - Rev.A
RB160SS-30
lElectrical Characteristic Curves
100
10
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
100
10
Data Sheet
IFSM
time
1cyc
Ta=25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
1 10 100
TIME : t (ms)
IFSM-t CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/4
2015.10 - Rev.A
4페이지 Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ RB160SS-30.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
RB160SS-30 | Schottky Barrier Diode | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |