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BD9582F-M 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BD9582F-M은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BD9582F-M 기능
기능 EARTH LEAKAGE CURRENT DETECTOR IC
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BD9582F-M 데이터시트, 핀배열, 회로
Datasheet
EARTH LEAKAGE CURRENT DETECTOR
Automotive
EARTH LEAKAGE
CURRENT DETECTOR IC
BD9582F-M
General Description
BD9582F-M integrates leakage detector and amplifier.
Especially, it is suitable for high sensitivity and a high-
speed operation use, and since the operating temperature
range is wide, it can be used for various uses.
Key Specifications
Operating supply voltage range
12V to 22V
Operating temperature range: -40°C to 105°C
Supply current
330μA(typ.)
Trip voltage
4.48mV to 11.06mV
Output current ability(Ta=40): -200μA(min.)
Features
Small temperature fluctuation and high input
sensitivity
Wide operating temperature range
Packages
SOP8
W(Typ.) x D(Typ.) x H(Max.)
5.00mm x 6.20mm x 1.71mm
Applications
Earth leakage circuit breaker
Earth leakage circuit relay
Typical Application Circuit Example
RVS
CVS VZ
8
VS
SCR
COS
7
OS
6
NR
5
SC
C1
VR IN
GND
OD
Trip 1 CIN 2 3 4
Coil
CVR RIN
COD
ZCT:Zero current transformer
TEST SW&R
Product structureSilicon monolithic integrated circuit
www.rohm.co.jp
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays.
1/11
TSZ02201-0RCR1GZ00070-1-2
2012.10.29 Rev.002




BD9582F-M pdf, 반도체, 판매, 대치품
BD9582F-M
Test circuits
1.IS1
2.VT
3.IODSO
Datasheet
VR IN GND OD SC NR OS VS
12345678
ΔVIN
A
+
IS
VS
VR IN GND OD SC NR OS VS
12345678
VS
V VOD
ΔVIN
VR IN GND OD SC NR OS VS
12345678
ΔVIN
A
+
IOD
VOD
VS
4.IODSI
5.IOSSO/IOSSI
6.VSCON
VR IN GND OD SC NR OS VS
12345678
A
+
IOD
VOD
VR IN GND OD SC NR OS VS
12345678
VSC VS
A
+
IOS
VOS
VR IN GND OD SC NR OS VS
12345678
VSC VS
V Vos
7.VIC
8.VIDC
9.VSM
VR IN GND OD SC NR OS VS
12345678
VS
IC V VIC
VR IN GND OD SC NR OS VS
12345678
IIDC
V
VIDC
VR IN GND OD SC NR OS VS
12345678
VSM V
IS
10.IOS2
11.VSOFF
12.tON
VR IN GND OD SC NR OS VS
12345678
VSC IS
A
+
IOS
VOS
VR IN GND OD SC NR OS VS
12345678
0.047 V
VS
μF VOS
ΔVIN
VR IN GND OD SC NR OS VS
12345678
0.047
μF V
VS
0.047
μF
Timing Chart
Input voltage
between IN and VR
ΔVIN(IN-VR)
VT
OD/SC terminal voltage
VOD/VSC
VSCON
OS terminal voltage
VOS
0.8V
www.rohm.co.jp
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
tON
4/11
TSZ02201-0RCR1GZ00070-1-2
2012.10.29 Rev.002

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BD9582F-M 전자부품, 판매, 대치품
BD9582F-M
Datasheet
Power Dissipation
Power dissipation(total loss) indicates the power that can be consumed by IC at Ta=25(normal temperature).IC is heated
when it consumed power, and the temperature of IC chip becomes higher than ambient temperature. The temperature that
can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited.
Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal
resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum
value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or lead
frame of the package. The parameter which indicates this heat dissipation capability(hardness of heat release)is called
thermal resistance, represented by the symbol θja/W.The temperature of IC inside the package can be estimated by this
thermal resistance. Fig.9(a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient
temperature Ta, junction temperature Tj, and power dissipation Pd can be calculated by the equation below
θja = (Tj - Ta) / Pd /W
・・・・・ ()
Derating curve in Fig.9(b) indicates power that can be consumed by IC with reference to ambient temperature. Power that
can be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal
resistance θja. Thermal resistance θja depends on chip size, power consumption, package, ambient temperature, package
condition, wind velocity, etc even when the same of package is used. Thermal reduction curve indicates a reference value
measured at a specified condition. Fig.10(a) show a derating curve for an example of BD9582F-M.
θja=(Tj-Ta)/P /W
Ambient temperatureTa []
Power dissLipSaItion ofLSI [W]
Pd (max)
P2
P1
θja2 < θja1
θ' ja2
θ ja2
Chip surfacetemperature Tj []
Power dissipationPdP[[WW]]
(a) Thermal resistance
θ' ja1 θ ja1
Tj ' (max) Tj (max)
0 25 50 75 100 125 150
Ambient temperature Ta []
(b) Derating curve
Figure 9. Thermal resistance and derating
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
105
25 50 75 100
Ambient Temperature Ta []
(a) BD9582F-M
125
150
Derating curve slope
UNIT
BD9582F-M
5.5 mW/
When using the unit above Ta=25, subtract the value above per degree
Permissible dissipation is a value when FR4 glass epoxy board 70mm×70mm×1.6mm
(cooper foil area below 3%) is mounted.
Figure 10. Derating curve
www.rohm.co.jp
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/11
TSZ02201-0RCR1GZ00070-1-2
2012.10.29 Rev.002

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부품번호상세설명 및 기능제조사
BD9582F-M

EARTH LEAKAGE CURRENT DETECTOR IC

ROHM Semiconductor
ROHM Semiconductor

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