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V3PAN50-M3 데이터시트 PDF




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부품번호 V3PAN50-M3 기능
기능 Surface Mount Trench MOS Barrier Schottky Rectifier
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V3PAN50-M3 데이터시트, 핀배열, 회로
www.vishay.com
V3PAN50-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SMPATM
Top View
Bottom View
DO-221BC (SMPA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 3.0 A (TA = 125 °C)
TJ max.
Package
3.0 A
50 V
80 A
0.40 V
150 °C
DO-221BC (SMPA)
Diode variation
Single die
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-221BC (SMPA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Maximum DC reverse voltage
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
VDC
IFSM
Operating junction and storage temperature range
TJ, TSTG
Note
(1) Free air, mounted on recommended copper pad area
V3PAN50
3N5
50
3.0
35
80
-40 to +150
UNIT
V
A
V
A
°C
Revision: 20-Oct-16
1 Document Number: 87909
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




V3PAN50-M3 pdf, 반도체, 판매, 대치품
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-221BC (SMPA)
Cathode Band
V3PAN50-M3
Vishay General Semiconductor
0.122 (3.10)
0.098 (2.50)
0.059 (1.50)
0.030 (0.75)
0.106 (2.70)
0.098 (2.50)
0.057 (1.45)
0.049 (1.25)
0.087 (2.20)
0.063 (1.6)
0.039 (1.00)
0.035 (0.90)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.012 (0.30)
0.006 (0.15)
0.087 (2.20)
MIN.
0.059 (1.50) Typ.: 0.019 (0.48)
0.030 (0.75)
Mounting Pad Layout
MAX. 0.037 (0.92)
0.060 (1.52)
MIN.
MIN. 0.122 (3.10)
0.217 (5.52)
MIN.
0.059 (1.50)
Revision: 20-Oct-16
4 Document Number: 87909
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
V3PAN50-M3

Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay
Vishay

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