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부품번호 | SQ9945AEY 기능 |
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기능 | Automotive Dual N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 9 페이지수
SQ9945AEY
Vishay Siliconix
Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2 G1
5 D2
D1
60
0.080
± 3.7
Dual
D2
G2
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
Top View
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Pb-free
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SO-8
SQ9945AEY-T1-E3
SQ9945AEY-T1
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 70 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
EAS
IAS
Maximum Power Dissipationb
TC = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
- 3.7
- 3.2
2
25
-
-
2.4
1.7
- 55 to + 175
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
-
-
UNIT
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 74499
S-81559-Rev. B, 23-Oct-08
http://oneic.com/
www.vishay.com
1
SQ9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.4 30
2.0 VGS = 10 V
ID = 3.7 A
1.6
1.2
0.8
10
TJ = 175 °C
TJ = 25 °C
0.4
0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
0 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.20 56
0.16
0.12
0.08
0.04
ID = 3.7 A
52
Graph to be available
48 upon completion
of testing
44
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
http://oneic.com/
Document Number: 74499
S-81559-Rev. B, 23-Oct-08
4페이지 THERMAL RATINGS TA = 25 °C, unless otherwise noted
1000
100 000
SQ9945AEY
Vishay Siliconix
100 Graph to be available
upon completion
of testing
10
10000 Graph to be available
upon completion
of testing
1000
1
0.1 1
10 100
Inductance (mH)
Single Pulse Avalanche Current (Peak) vs. Inductance
10
100
25 50 75 100 125 150
TJ(start) (°C)
Single Pulse Avalanche Energy (Peak) vs. TJ(start)
1 Graph to be available
upon completion
of testing
0.1
0.01
10-4
10-3
10-2
10-1
1
10
tav (s)
Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 °C
100
1000
Document Number: 74499
S-81559-Rev. B, 23-Oct-08
http://oneic.com/
www.vishay.com
7
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부품번호 | 상세설명 및 기능 | 제조사 |
SQ9945AEY | Automotive Dual N-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |