PDF MBR40H100WTG Data sheet ( Hoja de datos )

Número de pieza	MBR40H100WTG
Descripción	Switch Mode Power Rectifier
Fabricantes	ON Semiconductor
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No Preview Available ! MBR40H100WTG Switch Mode Power Rectifier 100 V, 40 A Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 4.3 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Please See the Table on the Following Page http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES 100 VOLTS 1 2, 4 3 1 2 3 TO−247 CASE 340AL MARKING DIAGRAM B40H100 AYWWG © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 5 B40H100 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR40H100WTG TO−247 (Pb−Free) 30 Units/Rail 1 Publication Order Number: MBR40H100WT/D 1 page MBR40H100WTG MERCURY SWITCH S1 +VDD IL 10 mH COIL ID DUT VD IL t0 BVDUT ID VDD t1 t2 t Figure 10. Test Circuit The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive Figure 11. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ ǓWAVAL [ 1 2 LI 2 LPK BVDUT BVDUTVDD EQUATION (2): WAVAL [ 1 2 LI 2 LPK http://onsemi.com 5 5 Page

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