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TLVD42Q1S2 데이터시트 PDF




Vishay에서 제조한 전자 부품 TLVD42Q1S2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 TLVD42Q1S2 기능
기능 DH Backlighting LED
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TLVD42Q1S2 데이터시트, 핀배열, 회로
www.vishay.com
TLVD42....
Vishay Semiconductors
DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package
19231
DESCRIPTION
The TLVD42.... series was developed for backlighting in the
extrem bright double heterojunction (DH) red GaAlAs on
GaAs technology. Due to its special shape the spatial
distribution of the radiation is qualified for backlighting.
To optimize the brightness of backlighting a custom-built
reflector (with scattering) is required. Uniform illumination
can be enhanced by covering the front of the reflector with
diffusor material.
This is a bright and flexible solution for backlighting different
areas.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: ± 85°
FEATURES
• High brightness
• Wide viewing angle
• Categorized for luminous flux
• Available in DH red
• Tinted clear package
• Low power dissipation
• Low self heating
• Rugged design
• High reliability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Backlighting of display panels, LCD displays, symbols on
switches, keyboards, graphic boards, and measuring
scales
• Illumination of large areas e.g. dot matrix displays
PARTS TABLE
PART
COLOR
TLVD42Q1S2
TLVD42R1S2
Red
Red
LUMINOUS FLUX
(mlm)
MIN. TYP. MAX.
71 80 280
112 130 280
at IF
(mA)
15
15
WAVELENGTH
(nm)
MIN. TYP. MAX.
630 640 650
630 640 650
at IF
(mA)
10
10
FORWARD VOLTAGE
(V)
MIN. TYP. MAX.
- 1.8 2.2
- 1.8 2.2
at IF
(mA)
20
20
TECHNOLOGY
GaAlAs on GaAs
GaAlAs on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLVD42....
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp 10 μs
Tamb 60 °C
t 5 s, 2 mm from body
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
6
50
1
100
100
-40 to +100
-55 to +100
260
400
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.4, 14-Oct-14
1 Document Number: 83434
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




TLVD42Q1S2 pdf, 반도체, 판매, 대치품
www.vishay.com
PACKAGE DIMENSIONS in millimeters
CA
TLVD42....
Vishay Semiconductors
+ 0.2
0.5 - 0.1
2.54 nom.
Drawing-No.: 6.544-5226.01-4
Issue: 2; 28.07.14
AREA NOT PLANE
Ø 2.95 ± 0.1
+ 0.15
0.4 - 0.05
technical drawings
according to DIN
specifications
Rev. 1.4, 14-Oct-14
4 Document Number: 83434
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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관련 데이터시트

부품번호상세설명 및 기능제조사
TLVD42Q1S2

DH Backlighting LED

Vishay
Vishay

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