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NRVBM120ET1G 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NRVBM120ET1G은 전자 산업 및 응용 분야에서
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부품번호 NRVBM120ET1G 기능
기능 Surface Mount Schottky Power Rectifier
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NRVBM120ET1G 데이터시트, 핀배열, 회로
MBRM120ET1G,
NRVBM120ET1G,
MBRM120ET3G,
NRVBM120ET3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
POWERMITEis JEDEC Registered as DO216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes
260C Maximum for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 3
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 20 VOLTS
POWERMITE
CASE 457
STYLE 1
MARKING DIAGRAM
1
M
BCVG
2
BCV
M
G
= Device Code
= Date Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MBRM120ET1G
NRVBM120ET1G
POWERMITE
(PbFree)
POWERMITE
(PbFree)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MBRM120ET3G
POWERMITE 12,000 /
(PbFree) Tape & Reel
NRVBM120ET3G POWERMITE 12,000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRM120E/D




NRVBM120ET1G pdf, 반도체, 판매, 대치품
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
1000
100
TJ = 25C
150
148
146
Rtja = 33.72C/W
51C/W
69C/W
83.53C/W
96C/W
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
144
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
NRVBM120ET1G

Surface Mount Schottky Power Rectifier

ON Semiconductor
ON Semiconductor

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