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What is SQ3425EV?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "Automotive P-Channel MOSFET".


SQ3425EV Datasheet PDF - Vishay

Part Number SQ3425EV
Description Automotive P-Channel MOSFET
Manufacturers Vishay 
Logo Vishay Logo 


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www.vishay.com
SQ3425EV
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -4.5 V
RDS(on) (Ω) at VGS = -2.5 V
ID (A)
Configuration
Package
-20
0.060
0.100
-7.4
Single
TSOP-6
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TSOP-6 Single
S
4
D
5
D
6
Marking Code: 8Z
1
D
Top View
2
D
3
G
(1, 2, 5, 6) D
(3) G
(4) S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-20
± 12
-7.4
-4.3
-4.5
-29
-11
6
5
1.67
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S15-2410-Rev. A, 12-Oct-15
1
Document Number: 68215
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQ3425EV equivalent
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQ3425EV
Vishay Siliconix
Axis Title
100
IDM limited
10000
10
Limited by RDS(on) (1)
1
10 μs
100 μs 1000
1 ms
10 ms
100 ms, 11s0,010 s, DC
0.1
BVDSS limited
TC = 25 °C
Single pulse
0.01 10
0.01 0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2410-Rev. A, 12-Oct-15
5
Document Number: 68215
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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Part NumberDescriptionMFRS
SQ3425EVThe function is Automotive P-Channel MOSFET. VishayVishay

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