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부품번호 | SQ4940EY 기능 |
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기능 | Automotive Dual N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
www.vishay.com
SQ4940EY
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
40
0.035
0.055
7
Dual
SO-8
D1 D2
S1 1
G1 2
S2 3
G2 4
Top View
8 D1
7 D1 G1
6 D2
5 D2
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4940EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
40
± 20
7
4
3
28
17
14
3.3
1.1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
110
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 72163
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.0
8 ID = 5.7 A
VDS = 20 V
ID = 5.7 A
1.7
6 1.4
4 1.1
SQ4940EY
Vishay Siliconix
VGS = 10 V
VGS = 4.5 V
2 0.8
0
0
100
3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.15
10
TJ = 150 °C
1
0.12
0.09
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.5
0.2
0.06
TJ = 150 °C
0.03
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
52
ID = 1 mA
50
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
48
46
44
- 1.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
42
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2113-Rev. B, 07-Nov-11
4
Document Number: 72163
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
Package Information
Vishay Siliconix
876 5
EH
123 4
S
D
0.25 mm (Gage Plane)
A
e B A1
L
h x 45
C
All Leads
q 0.101 mm
0.004"
MILLIMETERS
DIM Min
Max
A 1.35
1.75
A1 0.10
B 0.35
0.20
0.51
C 0.19
0.25
D 4.80
5.00
E 3.80
4.00
e 1.27 BSC
H 5.80
6.20
h 0.25
0.50
L 0.50
0.93
q 0°
8°
S 0.44
0.64
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
INCHES
Min Max
0.053
0.069
0.004
0.008
0.014
0.020
0.0075
0.010
0.189
0.196
0.150
0.157
0.050 BSC
0.228
0.244
0.010
0.020
0.020
0.037
0° 8°
0.018
0.026
Document Number: 71192
11-Sep-06
www.vishay.com
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