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부품번호 | SQ4949EY 기능 |
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기능 | Automotive Dual P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 11 페이지수
www.vishay.com
SQ4949EY
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A) per leg
Configuration
- 30
0.035
0.065
- 7.5
Dual
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
S1 S2
8 D1
7 D1 G1
6 D2
5 D2
G2
D1 D2
P-Channel MOSFET P-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4949EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 30
± 20
- 7.5
- 4.3
-3
- 30
- 17
14
3.3
1.1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
110
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 67035
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.0
8 ID = 4.9 A
VDS = 15 V
ID = 5.9 A
1.7
6 1.4
4 1.1
SQ4949EY
Vishay Siliconix
VGS = 10 V
VGS = 4.5 V
2 0.8
0
0
100
4 8 12 16
Qg - Total Gate Charge (nC)
Gate Charge
20
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
10
TJ = 150 °C
1
0.20
0.15
0.1
0.01
TJ = 25 °C
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
1.0
0.7
ID = 250 μA
0.4
ID = 5 mA
0.1
0.10
0.05
0.00
0
TJ = 25 °C
24
TJ = 150 °C
6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 30
ID = 1 mA
- 32
- 34
- 36
- 0.2
- 38
- 0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
- 40
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2113-Rev. B, 07-Nov-11
4
Document Number: 67035
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
SO-8
Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package:
Ordering Information
Vishay Siliconix
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQ4182EY
SQ4182EY-T1-GE3
SQ4184EY
SQ4184EY-T1-GE3
SQ4282EY
SQ4282EY-T1-GE3
SQ4284EY
SQ4284EY-T1-GE3
SQ4401EY
SQ4401EY-T1-GE3
SQ4410EY
SQ4410EY-T1-GE3
SQ4425EY
SQ4425EY-T1-GE3
SQ4431EY
SQ4431EY-T1-GE3
SQ4435EY
SQ4435EY-T1-GE3
SQ4470EY
SQ4470EY-T1-GE3
SQ4483BEEY
SQ4483BEEY-T1-GE3
SQ4483EY
-
SQ4532AEY
-
SQ4840EY
SQ4840EY-T1-GE3
SQ4850EY
SQ4850EY-T1-GE3
SQ4917EY
SQ4917EY-T1-GE3
SQ4920EY
SQ4920EY-T1-GE3
SQ4937EY
SQ4937EY-T1-GE3
SQ4940AEY
SQ4940AEY-T1-GE3
SQ4946AEY
SQ4946AEY-T1-GE3
SQ4949EY
SQ4949EY-T1-GE3
SQ4961EY
SQ4961EY-T1-GE3
SQ9407EY
SQ9407EY-T1-GE3
SQ9945BEY
SQ9945BEY-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ4182EY-T1_GE3
SQ4184EY-T1_GE3
SQ4282EY-T1_GE3
SQ4284EY-T1_GE3
SQ4401EY-T1_GE3
SQ4410EY-T1_GE3
SQ4425EY-T1_GE3
SQ4431EY-T1_GE3
SQ4435EY-T1_GE3
SQ4470EY-T1_GE3
SQ4483BEEY-T1_GE3
SQ4483EY-T1_GE3
SQ4532AEY-T1_GE3
SQ4840EY-T1_GE3
SQ4850EY-T1_GE3
SQ4917EY-T1_GE3
SQ4920EY-T1_GE3
SQ4937EY-T1_GE3
SQ4940AEY-T1_GE3
SQ4946AEY-T1_GE3
SQ4949EY-T1_GE3
SQ4961EY-T1_GE3
SQ9407EY-T1_GE3
SQ9945BEY-T1_GE3
Revision: 25-Aug-15
1 Document Number: 66624
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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SQ4949EY | Automotive Dual P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |