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기능 Automotive N-Channel MOSFET
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SQ3418AEEV 데이터시트, 핀배열, 회로
www.vishay.com
SQ3418AEEV
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Package
TSOP-6 Single
S
4
D
5
D
6
40
0.032
0.042
8
Single
TSOP-6
FEATURES
• TrenchFET® power MOSFET
• Typical ESD protection 800 V
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(1, 2, 5, 6) D
(3) G
Marking Code: 8M
1
D
Top View
2
D
3
G
N-Channel MOSFET
(4) S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
8
5
4
32
11
6
5
1.6
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S15-2572-Rev. A, 02-Nov-15
1
Document Number: 62975
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQ3418AEEV pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQ3418AEEV
Vishay Siliconix
10
ID = 4 A
8 VDS = 20 V
Axis Title
6
4
2
0
02468
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
10
2.0
ID = 5 A
1.7
1.4
Axis Title
VGS = 10 V
10000
VGS = 4.5 V 1000
1.1
100
0.8
0.5 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
0.5 10000
0.2
1000
-0.1
ID = 5 mA
-0.4
ID = 250 μA
100
-0.7
-1.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
100 10000
10
1 TJ = 150 °C
TJ = 25 °C
1000
0.1
100
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
0.1 10000
0.08
0.06
0.04
0.02
0
0
TJ = 150 °C
1000
100
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
55
ID = 1 mA
50
Axis Title
45
40
10000
1000
100
35 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S15-2572-Rev. A, 02-Nov-15
4
Document Number: 62975
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQ3418AEEV 전자부품, 판매, 대치품
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1 Document Number: 91000

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SQ3418AEEV

Automotive N-Channel MOSFET

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