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부품번호 | SQD25N06-22L 기능 |
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기능 | Automotive N-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 9 페이지수
www.vishay.com
SQD25N06-22L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-252
60
0.022
0.033
25
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Compliant to RoHS Directive 2002/95/EC
G
GDS
Top View
Drain Connected to Tab
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD25N06-22L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
VGS
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
25
20
25
100
24
28
62
20
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (Fr-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
2.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2046-Rev. C, 24-Oct-11
1
Document Number: 65360
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100 0.25
10 TJ = 150 °C
0.20
SQD25N06-22L
Vishay Siliconix
1
TJ = 25 °C
0.15
0.1 0.10
0.01
0.001
0
3000
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
2500
2000
1500
Ciss
1000
500
Coss
Crss
0
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
0.6
60
0.05
TJ = 150 °C
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
ID = 25 A
8
VDS = 30 V
6
4
2
0
0 5 10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
0.3
0
- 0.3
- 0.6
- 0.9
ID = 5 mA
ID = 250 µA
- 1.2
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
S11-2046-Rev. C, 24-Oct-11
4
Document Number: 65360
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
b b2
e
e1
E1
A
C2
C
A1
MILLIMETERS
DIM.
MIN.
MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10
-
E 6.35 6.73
E1 4.32
-
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
INCHES
MIN.
MAX.
0.086
0.094
- 0.005
0.025
0.035
0.030
0.045
0.195
0.215
0.018
0.024
0.018
0.035
0.235
0.245
0.161
-
0.250
0.265
0.170
-
0.370
0.410
0.090 BSC
0.180 BSC
0.055
0.070
0.035
0.050
- 0.040
0.040
0.060
Revision: 02-Sep-13
1 Document Number: 64424
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |