|
|
PDF SM1108NSF Data sheet ( Hoja de datos )
| Número de pieza | SM1108NSF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SM1108NSF (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
SM1108NSF/SM1108NSFP
®
N-Channel Enhancement Mode MOSFET
Features
· 100V/120A,
RDS(ON)=7.4mW (max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
Top View of TO-220
GDS
Top View of TO-220-FP
D
Applications
· Synchronous Rectification.
· Power Management in Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1108NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
FP : TO-220-FP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1108NS F/FP : SM1108N
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
1
www.sinopowersemi.com
1 page  
SM1108NSF/SM1108NSFP
®
Typical Operating Characteristics (Cont.)
Output Characteristics
180
160 VGS= 6,7,8,9,10V
5.5V
140
120
100
80
5V
60
40
20 4.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
8.0
7.5
7.0
6.5
VGS=10V
6.0
5.5
5.0
4.5
4.0
0
20 40 60 80 100 120
ID- Drain Current (A)
Gate-Source On Resistance
20
I =40A
DS
18
16
14
12
10
8
6
4
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
5
www.sinopowersemi.com
5 Page 
SM1108NSF/SM1108NSFP
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 °C/second max.
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
³350
<2.5 mm
235 °C
220 °C
³2.5 mm
220 °C
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<1.6 mm
1.6 mm – 2.5 mm
³2.5 mm
<350
260 °C
260 °C
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLD ERA BILIT Y
HTRB
HTGB
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - May, 2014
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SM1108NSF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SM1108NSF | N-Channel Enhancement Mode MOSFET | Sinopower |
| SM1108NSFP | N-Channel Enhancement Mode MOSFET | Sinopower |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |