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IRF1324PbF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1324PbF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRF1324PbF 자료 제공

부품번호 IRF1324PbF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRF1324PbF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRF1324PbF 데이터시트, 핀배열, 회로
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96199A
IRF1324PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
24V
1.2m:
1.5m:
c353A
S ID (Package Limited) 195A
GDS
TO-220AB
IRF1324PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat Greased Surface
jJunction-to-Ambient
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D
Drain
Max.
™353
™249
195
1412
300
2.0
± 20
0.46
-55 to + 175
300
S
Source
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
mJ
A
mJ
Units
°C/W
1
09/24/09




IRF1324PbF pdf, 반도체, 판매, 대치품
IRF1324PbF
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
350 Limited By Package
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Fig 9. TMC a, xCiamseumTemDpreariantuCreu(r°rCe)nt vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
32
Id = 5mA
30
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 44A
83A
BOTTOM 195A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRF1324PbF 전자부품, 판매, 대치품
IRF1324PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
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IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7

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IRF1324PbF

Power MOSFET ( Transistor )

International Rectifier
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