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PDF SM1105NSUB Data sheet ( Hoja de datos )
| Número de pieza | SM1105NSUB | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM1105NSUB
Features
· 100V/16A,
RDS(ON)= 100mW (max.) @ VGS=10V
RDS(ON)= 170mW (max.) @ VGS=4.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
S
D
G
Top View of TO-251
D
Applications
G
· Power Management in TV Inverter.
S
N-Channel MOSFET
Ordering and Marking Information
SM1105NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UB : TO-251
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube (80ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1105NS UB: SM1105N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
1
www.sinopowersemi.com
1 page  
SM1105NSUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
20
18 VGS=6,7,8,9,10V
5.5V
16
14
12 5V
10
8
4.5V
6
4
4V
2
3.5V
0
012345
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
220
200
180 VGS=4.5V
160
140
120
100 VGS=10V
80
60
40
20
0 4 8 12 16 20
ID- Drain Current (A)
Gate-Source On Resistance
200
IDS=5A
180
160
140
120
100
80
60
40
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2014
5
www.sinopowersemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM1105NSUB.PDF ] | |
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