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부품번호 | MT1403A 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | MOS-TECH | ||
로고 | |||
MOS-TECH Semiconductor Co.,LTD
07$
N-Channel PowerTrench® MOSFET
25 V, 30 A, 8.5 mΩ
Features
General Description
JuO\ 2009
Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A
Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A
100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D
DTO-P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
49
16.5
70
40
33
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.5
40
°C/W
Device Marking
07$
Device
07$
Package
Reel Size
Tape Width
Quantity
D-PAK (TO-252)13 ’’12 mm 2500 units
©2009 0267(&+ Semiconductor Corporation
07$ Rev.C1
1
www.PWsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 16.5 A
8
VDD = 13 V
6
VDD = 10 V
4
VDD = 16 V
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
f = 1 MHz
100 VGS = 0 V
Crss
50
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
60 50
30 40
TJ = 25 oC
10
TJ = 150 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
30
VGS = 10 V
20
10
0
25
Limited by Package
VGS = 4.5 V
RθJC = 4.5 oC/W
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
105
100 us
10
THIS AREA IS
LIMITED BY rDS(on)
1 ms
1 SINGLE PULSE
TJ = MAX RATED
10 ms
RθJC = 4.5 oC/W
TC = 25 oC
100 ms
DC
0.1
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
104 VGS = 10 V
SINGLE PULSE
103 RθJC = 4.5 oC/W
TC = 25 oC
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2009 0267(&+ Semiconductor Corporation
07$ Rev.C1
4
www.PWsemi.com
4페이지 MOS-TECH Semiconductor Co.,LTD
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ੇⴔᇍᴀ݀ৌ㗙ϝ㗙ⱘⶹ䆚ѻᴗঞ݊Ҫᴗ߽خߎֱ䆕ᇍᅲᮑᴗ䖯㸠ⱘᡓ䇎DŽ
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ⶹ䆚ѻᴗঞ݊Ҫᴗ߽䗴៤։⢃ˈᴀ݀ৌϡᡓᢙӏԩ䋷ӏDŽ
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ᴀ݀ৌ᳝ৃ㛑خџܜ䗮ⶹⱘᚙމϟˈᇍᴀ䌘᭭᠔䆄䕑ⱘѻક㗙ѻક㾘Ḑ䖯㸠ᬍDŽ᠔ҹ䌁фՓ⫼
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ᅶ䙁ফᤳ༅ㄝⱘӏԩⳌ݇䋷ӏDŽ
6. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ㄝ᠔⼎ⱘᡔᴃݙᆍǃᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟ᯊˈϡҙ㽕ᇍ᠔
Փ⫼ⱘᡔᴃֵᙃ䖯㸠ऩ⣀䆘Ӌˈ䖬㽕ᇍᭈϾ㋏㒳䖯㸠ܙߚⱘ䆘ӋDŽ䇋乒ᅶ㞾㸠䋳䋷ˈ䖯㸠ᰃ৺䗖⫼ⱘ߸ᮁDŽ
ᴀ݀ৌᇍѢᰃ৺䗖⫼ϡ䋳ӏԩ䋷ӏDŽ
7. ᴀ䌘᭭Ё᠔䆄䕑ⱘѻકᑊ䴲䩜ᇍϛϔߎ⦄ᬙ䱰ᰃ䫭䇃䖤㸠ህӮ࿕㚕ࠄҎⱘ⫳ੑ㒭Ҏԧᏺᴹॅᆇⱘᴎ఼ǃ
㋏㒳བ⾡ᅝܼ㺙㕂㗙䖤䕧Ѹ䗮⫼ⱘǃए⭫ǃ➗⚻ࠊǃ㟾఼ẄǃḌ㛑ǃ⍋ᑩЁ㒻⫼ⱘᴎ఼㋏㒳ㄝ
㗠䆒䅵ࠊ䗴ⱘ⡍߿ᰃᇍѢક䋼ৃ䴴ᗻ㽕∖ᵕ催ⱘᴎ఼㋏㒳ㄝ˄ᇚᴀ݀ৌᣛᅮ⫼Ѣ≑䔺ᮍ䴶ⱘѻક⫼
Ѣ≑䔺ᯊ䰸˅DŽབᵰ㽕⫼ѢϞ䗄ⱘⳂⱘˈ䇋ࡵᖙџܜᴀ݀ৌⱘ㧹Ϯにষ䆶DŽˈᇍѢ⫼ѢϞ䗄Ⳃⱘ
㗠䗴៤ⱘᤳ༅ㄝˈᴀ݀ৌὖϡ䋳䋷DŽ
8. 䰸Ϟ䗄乍ݙᆍˈϡ㛑ᇚᴀ䌘᭭Ё䆄䕑ⱘѻક⫼Ѣҹϟ⫼䗨DŽབᵰ⫼Ѣҹϟ⫼䗨㗠䗴៤ⱘᤳ༅ˈᴀ݀ৌ
ὖϡ䋳䋷DŽ
1˅⫳ੑ㓈ᣕ㺙㕂DŽ
2˅ỡඟѢҎԧՓ⫼ⱘ㺙㕂DŽ
3˅⫼Ѣ⊏⭫˄ߛ䰸ᙷ䚼ǃ㒭㥃ㄝ˅ⱘ㺙㕂DŽ
4˅݊ҪⳈᕅડࠄҎⱘ⫳ੑⱘ㺙㕂DŽ
9. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻકᯊˈᇍѢ᳔乱ᅮؐǃᎹ⬉⑤⬉य़ⱘ㣗ೈǃᬒ⛁⡍ᗻǃᅝ㺙ᴵӊঞ݊Ҫᴵӊ䇋
ᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈݙՓ⫼DŽབᵰ䍙ߎњᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈՓ⫼ᯊˈᇍѢ⬅ℸ㗠䗴៤ⱘᬙ䱰ߎ⦄
ⱘџᬙˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
10.ᴀ݀ৌϔⳈ㟈Ѣᦤ催ѻકⱘ䋼䞣ৃ䴴ᗻˈԚϔ㠀ᴹ䇈ˈञᇐԧѻકᘏӮҹϔᅮⱘὖ⥛থ⫳ᬙ䱰ǃ㗙⬅
ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝDŽЎњ䙓ܡᴀ݀ৌⱘѻકথ⫳ᬙ䱰㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ☿♒
䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵
˄ࣙᣀ⹀ӊ䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃЎᴎ఼㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ
⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠ᎹDŽ
11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒Ϟौϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘॅ䰽DŽ乒ᅶᇚᴀ݀ৌѻકᅝ㺙ࠄ
乒ᅶⱘ䆒Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒Ϟ࠹㨑㗠
䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
12.ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ㗙ܼ䚼䕀䕑㗙ࠊDŽ
13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋ᴀ݀ৌⱘ㧹Ϯにষ䆶DŽ
Keep safety first in your circuit designs!
1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
©20 0267(&+ Semiconductor CorporationZZZPWVHPLFRP
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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MT1403-RG | Standar T-1 LED Lamps | marktech optoelectronics |
MT1403A | N-Channel Power MOSFET / Transistor | MOS-TECH |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |