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MT1403A 데이터시트 PDF




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부품번호 MT1403A 기능
기능 N-Channel Power MOSFET / Transistor
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MT1403A 데이터시트, 핀배열, 회로
MOS-TECH Semiconductor Co.,LTD
07$
N-Channel PowerTrench® MOSFET
25 V, 30 A, 8.5 m
Features
General Description
JuO\ 2009
„ Max rDS(on) = 8.5 mat VGS = 10 V, ID = 16.5 A
„ Max rDS(on) = 12.5 mat VGS = 4.5 V, ID = 13.0 A
„ 100% UIL test
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D
DTO-P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
49
16.5
70
40
33
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.5
40
°C/W
Device Marking
07$
Device
07$
Package
Reel Size
Tape Width
Quantity
D-PAK (TO-252)13 ’’12 mm 2500 units
©2009 0267(&+ Semiconductor Corporation
07$ Rev.C1
1
www.PWsemi.com




MT1403A pdf, 반도체, 판매, 대치품
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 16.5 A
8
VDD = 13 V
6
VDD = 10 V
4
VDD = 16 V
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
f = 1 MHz
100 VGS = 0 V
Crss
50
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
60 50
30 40
TJ = 25 oC
10
TJ = 150 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
100
30
VGS = 10 V
20
10
0
25
Limited by Package
VGS = 4.5 V
RθJC = 4.5 oC/W
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
105
100 us
10
THIS AREA IS
LIMITED BY rDS(on)
1 ms
1 SINGLE PULSE
TJ = MAX RATED
10 ms
RθJC = 4.5 oC/W
TC = 25 oC
100 ms
DC
0.1
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
104 VGS = 10 V
SINGLE PULSE
103 RθJC = 4.5 oC/W
TC = 25 oC
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2009 0267(&+ Semiconductor Corporation
07$ Rev.C1
4
www.PWsemi.com

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MT1403A 전자부품, 판매, 대치품
MOS-TECH Semiconductor Co.,LTD
⊼ᛣ
ᴀ᭛াᰃখ㗗䆥᭛ˈࠡ义᠔䕑㣅᭛⠜“Cautions”݋᳝ℷᓣᬜ࡯DŽ
݇Ѣ߽⫼ᴀ䌘᭭ᯊⱘ⊼ᛣџ乍
1. ᴀ䌘᭭ᰃЎњ䅽⫼᠋ḍ᥂⫼䗨䗝ᢽড়䗖ⱘᴀ݀ৌѻકⱘখ㗗䌘᭭ˈᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘᡔᴃֵᙃˈᑊ䴲ᛣ
ੇⴔᇍᴀ݀ৌ៪㗙㄀ϝ㗙ⱘⶹ䆚ѻᴗঞ݊Ҫᴗ߽خߎֱ䆕៪ᇍᅲᮑᴗ࡯䖯㸠ⱘᡓ䇎DŽ
2. ᇍѢ಴Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ǃ⿟ᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟㗠ᓩ䍋ⱘᤳᆇ៪㗙ᇍ㄀ϝ㗙ⱘ
ⶹ䆚ѻᴗঞ݊Ҫᴗ߽䗴៤։⢃ˈᴀ݀ৌϡᡓᢙӏԩ䋷ӏDŽ
3. ϡ㛑ᇚᴀ䌘᭭᠔䆄䕑ⱘѻક੠ᡔᴃ⫼Ѣ໻㾘῵⸈ണᗻ℺఼ⱘᓔথㄝⳂⱘǃݯџⳂⱘ៪݊Ҫⱘݯ䳔⫼䗨ᮍ䴶DŽ
঺໪ˈ೼ߎষᯊᖙ乏䙉ᅜ中国ⱘlj໪∛ঞ໪೑䌌ᯧ⊩NJঞ݊ҪߎষⱘⳌ݇⊩Ҹᑊሹ㸠䖭ѯ⊩ҸЁ㾘ᅮⱘᖙ㽕
᠟㓁DŽ
4. ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ǃ⿟ᑣǃㅫ⊩ҹঞ݊Ҫᑨ⫼⬉䏃՟ㄝ᠔ֵ᳝ᙃഛЎᴀ䌘᭭থ㸠ᯊⱘݙᆍˈ
ᴀ݀ৌ᳝ৃ㛑೼᳾خџܜ䗮ⶹⱘᚙމϟˈᇍᴀ䌘᭭᠔䆄䕑ⱘѻક៪㗙ѻક㾘Ḑ䖯㸠᳈ᬍDŽ᠔ҹ೼䌁ф੠Փ⫼
ᴀ݀ৌⱘञᇐԧѻકПࠡˈ䇋џܜ৥ᴀ݀ৌⱘ㧹Ϯにষ⹂䅸᳔ᮄⱘֵᙃᑊ㒣ᐌ⬭ᛣᴀ݀ৌ䗮䖛݀ৌЏ义
(http://www.mtsemi.com)ㄝ݀ᓔⱘ᳔ᮄֵᙃDŽ
5. ᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘֵᙃˈࠊ԰ᯊ៥Ӏሑ࡯ֱ䆕ߎ⠜ᯊⱘ㊒⹂ᗻˈԚϡᡓᢙ಴ᴀ䌘᭭ⱘভ䗄ϡᔧ㗠㟈Փ乒
ᅶ䙁ফᤳ༅ㄝⱘӏԩⳌ݇䋷ӏDŽ
6. ೼Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄᥂ǃ೒ǃ㸼ㄝ᠔⼎ⱘᡔᴃݙᆍǃ⿟ᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟ᯊˈϡҙ㽕ᇍ᠔
Փ⫼ⱘᡔᴃֵᙃ䖯㸠ऩ⣀䆘Ӌˈ䖬㽕ᇍᭈϾ㋏㒳䖯㸠ܙߚⱘ䆘ӋDŽ䇋乒ᅶ㞾㸠䋳䋷ˈ䖯㸠ᰃ৺䗖⫼ⱘ߸ᮁDŽ
ᴀ݀ৌᇍѢᰃ৺䗖⫼ϡ䋳ӏԩ䋷ӏDŽ
7. ᴀ䌘᭭Ё᠔䆄䕑ⱘѻકᑊ䴲䩜ᇍϛϔߎ⦄ᬙ䱰៪ᰃ䫭䇃䖤㸠ህӮ࿕㚕ࠄҎⱘ⫳ੑ៪㒭Ҏԧᏺᴹॅᆇⱘᴎ఼ǃ
㋏㒳 བ৘⾡ᅝܼ㺙㕂៪㗙䖤䕧Ѹ䗮⫼ⱘǃए⭫ǃ➗⚻᥻ࠊǃ㟾໽఼ẄǃḌ㛑ǃ⍋ᑩЁ㒻⫼ⱘᴎ఼੠㋏㒳ㄝ
㗠䆒䅵੠ࠊ䗴ⱘ⡍߿ᰃᇍѢક䋼੠ৃ䴴ᗻ㽕∖ᵕ催ⱘᴎ఼੠㋏㒳ㄝ˄ᇚᴀ݀ৌᣛᅮ⫼Ѣ≑䔺ᮍ䴶ⱘѻક⫼
Ѣ≑䔺ᯊ䰸໪˅DŽབᵰ㽕⫼ѢϞ䗄ⱘⳂⱘˈ䇋ࡵᖙџܜ৥ᴀ݀ৌⱘ㧹Ϯにষ੼䆶DŽ঺໪ˈᇍѢ⫼ѢϞ䗄Ⳃⱘ
㗠䗴៤ⱘᤳ༅ㄝˈᴀ݀ৌὖϡ䋳䋷DŽ
8. 䰸Ϟ䗄㄀乍ݙᆍ໪ˈϡ㛑ᇚᴀ䌘᭭Ё䆄䕑ⱘѻક⫼Ѣҹϟ⫼䗨DŽབᵰ⫼Ѣҹϟ⫼䗨㗠䗴៤ⱘᤳ༅ˈᴀ݀ৌ
ὖϡ䋳䋷DŽ
  1˅⫳ੑ㓈ᣕ㺙㕂DŽ
  2˅ỡඟѢҎԧՓ⫼ⱘ㺙㕂DŽ
  3˅⫼Ѣ⊏⭫˄ߛ䰸ᙷ䚼ǃ㒭㥃ㄝ˅ⱘ㺙㕂DŽ
  4˅݊ҪⳈ᥹ᕅડࠄҎⱘ⫳ੑⱘ㺙㕂DŽ
9. ೼Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻકᯊˈᇍѢ᳔໻乱ᅮؐǃᎹ԰⬉⑤⬉य़ⱘ㣗ೈǃᬒ⛁⡍ᗻǃᅝ㺙ᴵӊঞ݊Ҫᴵӊ䇋
೼ᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈݙՓ⫼DŽབᵰ䍙ߎњᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈՓ⫼ᯊˈᇍѢ⬅ℸ㗠䗴៤ⱘᬙ䱰੠ߎ⦄
ⱘџᬙˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
10.ᴀ݀ৌϔⳈ㟈࡯Ѣᦤ催ѻકⱘ䋼䞣੠ৃ䴴ᗻˈԚϔ㠀ᴹ䇈ˈञᇐԧѻકᘏӮҹϔᅮⱘὖ⥛থ⫳ᬙ䱰ǃ៪㗙⬅
ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝDŽЎњ䙓ܡ಴ᴀ݀ৌⱘѻકথ⫳ᬙ䱰៪㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ੠☿♒
៪䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵
˄ࣙᣀ⹀ӊ੠䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃ԰Ўᴎ఼੠㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ
⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖೼乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠Ꮉ԰DŽ
11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒໛Ϟौϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘॅ䰽DŽ乒ᅶ೼ᇚᴀ݀ৌѻકᅝ㺙ࠄ
乒ᅶⱘ䆒໛Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒໛Ϟ࠹㨑㗠
䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
12.೼᳾ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ៪㗙ܼ䚼䕀䕑៪㗙໡ࠊDŽ
13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ៪㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋৥ᴀ݀ৌⱘ㧹Ϯにষ੼䆶DŽ
Keep safety first in your circuit designs!
1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
©20 0267(&+ Semiconductor CorporationZZZPWVHPLFRP

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