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PDF MT19N10 Data sheet ( Hoja de datos )
| Número de pieza | MT19N10 | |
| Descripción | N-Channel Powe MOSFET | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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MOS-TECH Semiconductor Co.,LTD
MT19N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power f ield effect
transistors are produced using Mos-tech’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-state resistance, provide superior swit ching
performance, and wit hstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Features
• 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2011 MOS-TECH Semiconductor Corporation
D
!
"
!"
G!
"
"
!
S
MT19N10
100
15.6
8.5
62.4
± 20
220
9.6
5.0
6.0
2.5
50
0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 3.5 °C/W
-- 55 °C/W
-- 115 °C/W
Rev. A1.
1 page  
Gate Charge Test Circuit & Waveform
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2011 MOS-TECH Semiconductor Corporation
Rev. A1.
5 Page 
MOS-TECH Semiconductor Co.,LTD
Notes regarding these materials
1. This document is provided for reference purposes only so that Mos-tech customers may select the appropriate
Mos-tech products for their use. Mos-tech neither makes warranties or representations with respect to the
accuracy or completeness of the information contained in this document nor grants any license to any
intellectual property rights or any other rights of Mos-tech or any third party with respect to the information in
this document.
2. Mos-tech shall have no liability for damages or infringement of any intellectual property or other rights arising
out of the use of any information in this document, including, but not limited to, product data, diagrams, charts,
programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military
applications such as the development of weapons of mass destruction or for the purpose of any other military
use. When exporting the products or technology described herein, you should follow the applicable export
control laws and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and
application circuit examples, is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Mos-tech products listed in this
document, please confirm the latest product information with a Mos-tech sales office. Also, please pay regular
and careful attention to additional and different information to be disclosed by Mos-tech such as that disclosed
through our website. (http://www.mtsemi.com )
5. Mos-tech has used reasonable care in compiling the information included in this document, but Mos-tech
assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information
included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in
light of the total system before deciding about the applicability of such information to the intended application.
Mos-tech makes no representations, warranties or guaranties regarding the suitability of its products for any
particular application and specifically disclaims any liability arising out of the application and use of the
information in this document or Mos-tech products.
7. With the exception of products specified by Mos-tech as suitable for automobile applications, Mos-tech
products are not designed, manufactured or tested for applications or otherwise in systems the failure or
malfunction of which may cause a direct threat to human life or create a risk of human injury or which require
especially high quality and reliability such as safety systems, or equipment or systems for transportation and
traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication
transmission. If you are considering the use of our products for such purposes, please contact a Mos-tech
sales office beforehand. Mos-tech shall have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Mos-tech products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Mos-tech shall have no liability for damages arising out of the uses set forth in the above and purchasers who
elect to use Mos-tech products in any of the foregoing applications shall indemnify and hold harmless Mos-tech
Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Mos-tech, especially with respect
to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Mos-tech shall have no liability for malfunctions or
damages arising out of the use of Mos-tech products beyond such specified ranges.
10. Although Mos-tech endeavors to improve the quality and reliability of its products, IC products have specific
characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use
conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and
injury or damage caused by fire in the event of the failure of a Mos-tech product, such as safety design for
hardware and software including but not limited to redundancy, fire control and malfunction prevention,
appropriate treatment for aging degradation or any other applicable measures. Among others, since the
evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or
system manufactured by you.
11. In case Mos-tech products listed in this document are detached from the products to which the Mos-tech
products are attached or affixed, the risk of accident such as swallowing by infants and small children is very
high. You should implement safety measures so that Mos-tech products may not be easily detached from your
products. Mos-techshall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written
approval from Mos-tech.
13. Please contact a Mos-tech sales office if you have any questions regarding the information contained in this
document, Mos-tech semiconductor products, or if you have any other inquiries.
©2010 MOS-TECH Semiconductor Corporation
www.mtsemi.com
11 Page | ||
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