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부품번호 | MDU1721 기능 |
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기능 | Single N-channel Trench MOSFET | ||
제조업체 | MagnaChip | ||
로고 | |||
전체 6 페이지수
MDU1721
Single N-channel Trench MOSFET 40V, 100A, 1.4mΩ
General Description
The MDU1721 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1721 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 40V
ID = 100A @VGS = 10V
RDS(ON)
< 1.4mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC
TA=25oC(3)
TC=25oC
TC=100oC
TA=25oC(3)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Dec. 2013. Rev. 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
40
±20
204.1
100.0
129.1
32.9(3)
400.0
96.2
38.5
2.5(3)
450
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.3
Unit
oC/W
MagnaChip Semiconductor Ltd.
10
※ Note : ID = 50A
VDS = 20V
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
102
Operation in This Area
is Limited by R DS(on)
101
100
10-1
10-1
Single Pulse
TJ=Max rated
T =25℃
C
100 101
VDS, Drain-Source Voltage [V]
1 ms
10 ms
100 ms
1s
10s
DC
102
Fig.9 Maximum Safe Operating Area
10000
9000
8000
7000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
5000
4000
3000
2000
1000
Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0 5 10 15 20 25 30 35 40
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
220
200
180
160
140
120
100
80
60
40
20
0
25
50 75 100 125
TC, Case Temperature [℃]
150
Fig.10 Maximum Drain Current vs.
Case Temperature
100 D=0.5
0.2
0.1
10-1 0.05
0.02
10-2 0.01
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Dec. 2013. Rev. 1.1
4
MagnaChip Semiconductor Ltd.
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
MDU1721 | Single N-channel Trench MOSFET | MagnaChip |
MDU1722 | Single N-channel Trench MOSFET | MagnaChip |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |