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PDF MDU3605 Data sheet ( Hoja de datos )
| Número de pieza | MDU3605 | |
| Descripción | P-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU3605
Single P-Channel Trench MOSFET, -30V, -35.6A, 17.0mΩ
General Description
The MDU3605 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -35.6A @VGS = -10V
RDS(ON)
< 17.0mΩ @VGS = -10V
< 27.0mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
D D DD
D D DD
D
S S SG
GS SS
PowerDFN56
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25 oC (Silicon limited)
TA=25oC
TC=25oC
TA=25oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±25
-35.6
-9.4
-80.0
35.7
2.5
78.1
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
August. 2011. Version 1.1
(Note 1)
1
Symbol
RθJA
RθJC
Rating
50
3.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension
A
b
C
D1
D2
E
E1
E2
e
H
K
L
α
MILLIMETERS
Min Max
0.90 1.10
0.33 0.51
0.20 0.34
4.50 5.10
- 4.22
5.90 6.30
5.50 6.10
- 4.30
1.27BSC
0.41 0.71
0.20 -
0.51 0.71
0° 12°
August. 2011. Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDU3605.PDF ] | |
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