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Número de pieza | MDV3605 | |
Descripción | P-Channel Trench MOSFET | |
Fabricantes | MagnaChip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MDV3605 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MDV3605
Single P-Channel Trench MOSFET, -30V, -20A, 18.0mΩ
General Description
The MDV3605 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -20A @VGS = -10V
RDS(ON)
< 18.0mΩ @VGS = -10V
< 28.0mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
D D DD
D D DD
D
S S SG
GS SS
PDFN33
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25 oC (Package limited)
TC=25 oC (Silicon limited)
TA=25oC
TC=25oC
TA=25oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±25
-20.0
-29.0
-10.8(3)
-80.0
25.0
3.4(3)
60.5
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Aug. 2011. Version 1.1
(Note 1)
1
Symbol
RθJA
RθJC
Rating
36
5.0
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
Aug. 2011. Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MDV3605.PDF ] |
Número de pieza | Descripción | Fabricantes |
MDV3604 | P-Channel Trench MOSFET | MagnaChip |
MDV3605 | P-Channel Trench MOSFET | MagnaChip |
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