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PDF MDS1655 Data sheet ( Hoja de datos )
| Número de pieza | MDS1655 | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDS1655 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDS1655
Single N-channel Trench MOSFET 30V, 11A, 17.5mΩ
General Description
The MDS1655 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1655 is suitable device for DC-DC
Converters and general purpose applications.
Features
VDS = 30V
ID = 11A @VGS = 10V
R DS(ON)
< 17.5mΩ@VGS = 10V
< 25.0mΩ@VGS = 4.5V
Applications
DC-DC Converters
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
Absoloute Maximun Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current) (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy) (2)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient) (1)
Thermal Resistance, Junction-to-Case
G
S
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
11
6.9
45
2.5
1.0
50
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
25
Unit
oC/W
March. 2009. Version 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
March. 2009. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS1655.PDF ] | |
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