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MDS3603 PDF 데이터시트 ( Data , Function )

부품번호 MDS3603 기능
기능 P-Channel Trench MOSFET
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MDS3603 데이터시트, 핀배열, 회로
MDS3603
Single P-Channel Trench MOSFET, -30V, -12A, 10.1m
General Description
The MDS3603 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -12A @VGS = -10V
RDS(ON)
< 8.5m@VGS = -20V
< 10.1m@VGS = -10V
< 14.5m@VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-30
±25
-12
-48
2.5
112.5
-55~150
Rating
50
22
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
May. 2011. Version 1.1
1 MagnaChip Semiconductor Ltd.




MDS3603 pdf, 반도체, 판매, 대치품
10
* Note :VDS = -15V
ID = -12A
8
6
4
2
0
0 10 20 30 40
-Qg [nC]
Fig.7 Gate Charge Characteristics
50
102
101
Operation in This Area
100 is Limited by R DS(on)
100 us
1 ms
10 ms
100 ms
1s
10s
100s
DC
10-1
10-2
10-1
Single Pulse
Rθ ja=50/W
Ta=25
100 101
-VDS [V]
102
Fig.9 Maximum Safe Operating Area
3.0n
2.5n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2.0n
1.5n
Ciss
1.0n
500.0p
Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
5 10 15 20 25
-V [V]
DS
Fig.8 Capacitance Characteristics
30
16
14
12
10
8
6
4
2
0
25 50 75 100 125 150
Ta []
Fig.10 Maximum Drain Current vs.
Ambient Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RΘ JA=50/W
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration[s]
Fig.11 Transient Thermal Response Curve
May. 2011. Version 1.1
4 MagnaChip Semiconductor Ltd.

4페이지










MDS3603 전자부품, 판매, 대치품
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
May. 2011. Version 1.1
7 MagnaChip Semiconductor Ltd.

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