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부품번호 | MDV1527 기능 |
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기능 | N-Channel Trench MOSFET | ||
제조업체 | MagnaChip | ||
로고 | |||
전체 7 페이지수
MDV1527
Single N-channel Trench MOSFET 30V, 20A, 15.9mΩ
General Description
The MDV1527 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1527 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 20A @VGS = 10V
RDS(ON)
< 15.9mΩ @VGS = 10V
< 23.7mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
29.0
20
20
11.0(3)
8.8(3)
60
23.5
15.0
3.4(3)
2.2(3)
23
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.3
Unit
oC/W
May. 2011. Version1.2
1 MagnaChip Semiconductor Ltd.
20
4.5V 4.0V
5.0V
15
8.0V
V = 10V
GS
3.5V
10
5
3.0V
0
0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
1.8
VGS=10V
1.6 ID=8A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
30
25
VGS = 4.5V
20
15
VGS = 10V
10
5
5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
※ Notes :
ID = 8.0A
30
20
TA = 25℃
10
0
2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
VDS = 5V
12
8
TA=25℃
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
※ Notes :
VGS = 0V
101
100
TA=25℃
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2011. Version1.2
4 MagnaChip Semiconductor Ltd.
4페이지 DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
May. 2011. Version1.2
7 MagnaChip Semiconductor Ltd.
7페이지 | |||
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