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부품번호 | MDF4N60B 기능 |
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기능 | N-Channel Trench MOSFET | ||
제조업체 | MagnaChip | ||
로고 | |||
전체 6 페이지수
MDF4N60B
N-Channel MOSFET 600V, 4.6A, 2.0Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.6A
RDS(ON) ≤ 2.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
Jun. 2011 Version 1.1
1
S
Rating
600
±30
4.6*
2.9*
18.4*
34.7
0.28
9.25
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
62.5
3.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
10 ※ Note : ID = 4.6A
8
120V
300V
480V
6
4
2
0
0 2 4 6 8 10 12
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
14
16
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 s
100 s
1 ms
10 ms
100 ms
1s
DC
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1 100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
10000
8000
6000
single Pulse
R
thJC
=
3.6℃
/W
TC = 25℃
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
1000
800
600
Coss
Ciss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
C =C
rss gd
400
200
Crss
※ Notes ;
1. V = 0 V
GS
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
D=0.5
100
0.2
0.1
0.05
10-1
10-2
10-5
0.02
0.01
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
RΘ JC=3.6℃ /W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.10 Transient Thermal Response Curve
6
4
2
0
25 50 75 100 125 150
T,
C
Case
Temperature
[℃
]
Fig.12 Maximum Drain Current vs. Case
Temperature
Jun. 2011 Version 1.1
4 MagnaChip Semiconductor Ltd.
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부품번호 | 상세설명 및 기능 | 제조사 |
MDF4N60 | N-Channel MOSFET | MagnaChip |
MDF4N60B | N-Channel Trench MOSFET | MagnaChip |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |