Datasheet.kr   

MDF8N60B PDF 데이터시트 ( Data , Function )

부품번호 MDF8N60B 기능
기능 N-Channel Trench MOSFET
제조업체 MagnaChip
로고 MagnaChip 로고 


이 페이지 하단에 미리보기 및 MDF8N60B 다운로드 (pdf 파일) 링크가 있습니다.




전체 6 페이지

No Preview Available !

MDF8N60B 데이터시트, 핀배열, 회로
MDF8N60B
N-Channel MOSFET 600V, 8A, 1.05
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 8.0A
RDS(ON) ≤ 1.05Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
600
±30
8.0*
4.9*
32*
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
Jan. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.




MDF8N60B pdf, 반도체, 판매, 대치품
10 Note : ID = 8.0A
8
120V
300V
480V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101 1 ms
10 ms
1s 100 ms
100 DC
10-1
Single Pulse
TJ=Max rated
TC=25
10-2
10-1 100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
16000
14000
12000
single Pulse
RthJC = 2.71/W
TC = 25
10000
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
1 10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.71/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.10 Transient Thermal Response Curve
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Fig.12 Maximum Drain Current vs. Case
Temperature
Jan. 2012 Version 1.0
4 MagnaChip Semiconductor Ltd.

4페이지












구       성총 6 페이지
다운로드[ MDF8N60B.PDF 데이터시트 ]


 
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]


 

관련 데이터시트

부품번호상세설명 및 기능제조사
MDF8N60

N-Channel MOSFET

MagnaChip
MagnaChip
MDF8N60B

N-Channel Trench MOSFET

MagnaChip
MagnaChip

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵