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PDF MDWC0340EB Data sheet ( Hoja de datos )
| Número de pieza | MDWC0340EB | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDWC0340EB
Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 mΩ
General Description
The MDWC0340EB uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in
on-state resistance and excellent reliability. Excellent low
RSS(ON), low gate charge operation and operation for
Battery Application.
Features
- VSS = 12V
- Source-Source ON Resistance;
RSS(ON) typ. 2.5mΩ @ VGS = 4.5V
RSS(ON) typ. 2.7mΩ @ VGS = 3.8V
RSS(ON) typ. 3.2mΩ @ VGS = 3.1V
RSS(ON) typ. 4.1mΩ @ VGS = 2.5V
Applications
- Portable Battery Protection
Top View
3.54mm*1.77mm WLCSP
1. Source (FET1)
2. Gate (FET1)
3. Source (FET1)
4. Source (FET2)
5. Gate (FET2)
6. Source (FET2)
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted)
Characteristics
Source-Source Voltage
Gate-Source Voltage
Source Current
Total Power Dissipation
DC*1
Pulse*2
DC*1
Channel Temperature
Junction and Storage Temperature Range
Symbol
VSSS
VGSS
IS
ISp
PD
Tch
TJ, Tstg
Thermal Characteristics
Thermal Resistance
Characteristics
Symbol
RθJA
Rating
12
±8
13.6
110
0.89
150
-55~150
Units
V
V
A
A
W
oC
oC
Rating
140
Unit
oC/W
Dec. 2016. Rev 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
MDWC0340EB WLCSP POD(Package Outline Dimension)
Contents
Chip Thickness (Min. / Typ. / Max.)
Metal (Gate PAD)
Metal (Source PAD)
Passivation Layer
Chip Size
Gate Pad Open Size
Packaging
Value
110 / 140 / 190 ㎛
Al-Cu-Si
Cu/Ni/Au
Yes
3,540±40 ×1,770±40 ㎛ 2
Ø250 ㎛
5,000 pcs / 1 reel
Dec. 2016. Rev 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDWC0340EB.PDF ] | |
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