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부품번호 | SLU830C 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Maple Semiconductor | ||
로고 | |||
SLD830C/SLU830C
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters and high efficiency switching for power
management in portable and battery operated products.
D
Features
- 4.0A, 500V, RDS(on) = 1.5Ω@VGS = 10 V
- Low gate charge ( typical 20nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GS
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SLD830C / SLU830C
500
4.0
2.4
16
±30
275
4.0
4.8
4.5
48
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Max
2.6
50
110
Units
℃/W
℃/W
℃/W
Rev. 00 January . 2013
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 2 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
102 Operation in This Area
is Limited by R DS(on)
101
100 s
1 ms
100 ms10 ms
100 DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
※ Notes :
1. Zθ JC(t) = 2.6 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
10-2
10-5
single pulse
PDM
t1
t2
10-4 10-3 10-2 10-1 100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 January . 2013
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부품번호 | 상세설명 및 기능 | 제조사 |
SLU830C | N-Channel MOSFET | Maple Semiconductor |
SLU830UZ | N-Channel MOSFET | Maple Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |