PDF SLU4N70C Data sheet ( Hoja de datos )

Número de pieza	SLU4N70C
Descripción	N-Channel MOSFET
Fabricantes	Maple Semiconductor
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No Preview Available ! SLD4N70C / SLU4N70C 700V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 3A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N70C / SLU4N70C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 700 3 1.8 12 ±30 100 3 8.3 4.5 83 0.67 -55 to +150 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient SLD4N70C / SLU4N70C 1.50 0.5 62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ℃/W ℃/W Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 November. 2014 1 page Gate Charge Test Circuit & Waveform Current Regulator 50KΩ Same Type as DUT VGS 12V 200nF 300nF 10V VGS VDS Qgs 3mA DUT R1 R2 Current Sampling (IG) Current Sampling (ID) Resistor Resistor Qg Qgd Charge Resistive Switching Test Circuit & Waveforms 10V Vout Vin RG RL VDD ( 0.5 rated VDS ) DUT Vout 90% Vin 10% td(on) tr t on td(off) tf t off Unclamped Inductive Switching Test Circuit & Waveforms Vary tp to obtain required peak ID VDS LL ID EAS = --1-- 2 LL IAS2 BVDSS -------------------- BVDSS -- VDD BVDSS IAS RG 10V tp DUT C VDD VDD ID (t) tp VDS (t) Time Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 November. 2014 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
SLU4N70C	N-Channel MOSFET	Maple Semiconductor

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