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부품번호 | SLW10N80UZ 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Maple Semiconductor | ||
로고 | |||
SLW10N80UZ
800V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 10A, 800V, RDS(on)Typ. = 0.85Ω@VGS = 10 V
- Low gate charge ( typical 63 nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- ESD Improved capability
D
GDS
TO-3P
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
SLW10N80UZ
800
10
6
40
±25
350
10
30.5
4.5
305
2.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLW10N80UZ
0.40
--
62.5
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 October . 2014
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 5 A
0.0
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
102 is Limited by R DS(on)
100 us
101 1 ms
10 ms
100 ms
100 DC
※ Notes :
10-1 1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
100
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
10-1
0.2
0.1
0.05
10-2 0.02
0.01
single pulse
PDM
※ Notes :
1. Zθ JC(t) = 0.4 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
t1
t2
10-5 10-4 10-3 10-2 10-1 100 101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 October . 2014
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부품번호 | 상세설명 및 기능 | 제조사 |
SLW10N80UZ | N-Channel MOSFET | Maple Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |