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부품번호 | SLW60R070SJ 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Maple Semiconductor | ||
로고 | |||
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction
This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLW60R070SJ
600V N-Channel MOSFET
Features
-47A, 600V, RDS(on) typ.= 60mΩ@VGS = 10 V
- Low gate charge ( typical
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
170nC)
D
TO‐247
TO‐3P
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energ
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
*Drain current limited by maximum junction temperature.
SLW60R070SJ
600
47
29
140
±30
1135
9.3
1.72
50
391
3.13
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Value
0.32
0.5
62
Rev 1.0 September 2015
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
s
℃/W
℃/W
℃/W
Page1
ID=f(VDS); Tj=125 ℃ ; parameter: VGS
Figure5:Typ. output characteristics Tj=25℃
RDS(on)=f(ID); Tj=125 ℃ ; parameter:VGS
Figure6:Typ. drain-source on-state resistance
RDS(on)=f(Tj); ID=23 A; VGS=10 V
Figure7:Typ. drain-source on-state resistance
ID=f(VGS); VDS=40V
Figure8:Typ. transfer characteristics
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
Page4
4페이지 Gate Charge Test Circuit & Waveform
Current Regulator
50KΩ
Same Type
as DUT
12V 200nF
300nF
VGS
VDS
3mA
DUT
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
VGS
10V
Qgs
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
10V
Vout
Vin
RG
RL
VDD
( 0.5 rated VDS )
DUT
Vout
90%
Vin 10%
td(on)
tr
t on
td(off) tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
RG
10V
tp
LL
ID
DUT
C
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
VDD
VDD
ID (t)
VDS (t)
t p Time
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
Page7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ SLW60R070SJ.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SLW60R070SJ | N-Channel MOSFET | Maple Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |